k4t51163qi-hpf7 Samsung Semiconductor, Inc., k4t51163qi-hpf7 Datasheet - Page 28

• Manufacturer Part Number: k4t51163qi-hpf7
• Description: 512mb I-die Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4T51163QI
DQS
Note1
Note : DQS signal must be monotonic between Vil(dc)max and Vih(dc)min.
V
V
V
V
V
V
Hold Slew Rate
IL(dc)
IL(ac)
DDQ
REF(dc)
IH(ac)
IH(dc)
Rising Signal
Figure 10 - Illustration of nominal slew rate for tDH (single-ended DQS)
max
max
V
V
V
V
V
V
V
min
min
DDQ
IH(ac)
IH(dc)
IL(dc)
IL(ac)
SS
V
REF(dc)
SS
max
max
min
min
dc to V
dc to V
region
region
=
V
REF(dc)
REF
REF
- Vil(dc)max
∆TR
slew rate
nominal
tDS
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tDH
∆TR
Hold Slew Rate
Falling Signal
tDS
nominal
slew rate
=
Industrial
Vih(dc)min - V
tDH
∆TF
∆TF
REF(dc)
Rev. 1.0 August 2009
DDR2 SDRAM