k4t51163qi-hpf7 Samsung Semiconductor, Inc., k4t51163qi-hpf7 Datasheet - Page 16

• Manufacturer Part Number: k4t51163qi-hpf7
• Description: 512mb I-die Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

12.0 Input/Output capacitance
13.0 Electrical Characteristics & AC Timing for DDR2-800/667
13.1 Refresh Parameters by Device Density
13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
K4T51163QI
Input capacitance, CK and CK
Input capacitance delta, CK and CK
Input capacitance, all other input-only pins
Input capacitance delta, all other input-only pins
Input/output capacitance, DQ, DM, DQS, DQS
Input/output capacitance delta, DQ, DM, DQS, DQS
Refresh to active/Refresh command time
Average periodic refresh interval
Bin (CL - tRCD - tRP)
(
-40 °C < T
Parameter
tCK, CL=3
tCK, CL=4
tCK, CL=5
tCK, CL=6
Speed
tRCD
tRAS
tRC
tRP
Parameter
OPER
Parameter
< 95 °C; V
3.75
12.5
12.5
57.5
min
2.5
45
5
-
DDQ
DDR2-800(E7)
= 1.8V + 0.1V; V
5-5-5
tRFC
tREFI
70000
max
8
8
8
-
-
-
-
-40 °C ≤ T
DD
Symbol
Symbol
CDCK
= 1.8V + 0.1V)
CDIO
CCK
CIO
CDI
16 of 42
CI
CASE
3.75
min
2.5
15
15
60
45
3
-
≤ 95°C
DDR2-800(F7)
6-6-6
Min
1.0
1.0
2.5
x
x
x
DDR2-667
256Mb
70000
max
7.8
75
8
8
8
-
-
-
-
Max
0.25
0.25
2.0
2.0
3.5
0.5
512Mb
Industrial
105
7.8
3.75
min
15
15
60
45
5
3
-
127.5
DDR2-667(E6)
1Gb
7.8
5 - 5 - 5
Min
1.0
1.0
2.5
x
x
x
Rev. 1.0 August 2009
DDR2-800
DDR2 SDRAM
2Gb
195
7.8
70000
max
8
8
8
-
-
-
-
Max
0.25
1.75
0.25
2.0
3.5
0.5
327.5
4Gb
7.8
Units
ns
ns
ns
ns
ns
ns
ns
ns
Units
Units
pF
pF
pF
pF
pF
pF
ns
µs