lrs1329 Sharp Microelectronics of the Americas, lrs1329 Datasheet - Page 6

• Manufacturer Part Number: lrs1329
• Description: Stacked Chip Flash Sram
• Manufacturer: Sharp Microelectronics of the Americas

SHARI=
Reset
Down
Disable
Write
Standby
Standby
tes)
Read
output
Reset
Down
3. Truth Table (*l)
Block Diagram
Flash
*2. Command writes
*5. F-A., set to V,, or VI, in byte mode (F-BYTE=Vn).
*6.
*7. See the following
*l.
*3. Refer Section
*4. Never hold F-2
Power Output
Power
’
’
produce spurious
F-V,,+.,
F-‘RP set to V,, or V,, .
L=V,,, H=V,, , X=H or L . Refer
Read
Disable
Write
Standby -
Standby
Read
output
Disable
Write
SRAM
and F-V,=2.7V
F-BYTE
.F-?i?
*2,3,4
F-X
F-m
F-E
F*
*4.5
Note
S-A,,
S-E,
s-c>
S-OE
S-IRE
*6
*6
*6
*6
*6
*6
*6
*6
5. Flash
involving
low and F-s
results
SRAM Standby mode.
F-a
H
x
H
XLXXLH
L
4 b
I
j
;
i
:’
+
:>
:T
to 3-W.
Memory Comand Definition
F-B
block
and should
H
H
H
L
=-
>
>
>
low at the same timing.
F-3
to DC Characteristics.
erase or word/byte
LRS1329
H
’
x
L
Block
16M (x8/x16) b i t
F-V,
F-E
2M (x8) bit
not be attempted.
s-v,
x
H
’
L
Flash memory
erase or word/byte
-
F-V,
S-CE, S-GE, S-s
L
SRAM
*7
*7
.
S-GND
H
F-GND
for valid
write
----------------,
H -
x
-1
x
L
H
L
are reliably
write
S*
DIN during
H
x
x.7-.
H
L
L
with
F-mtoDPh
+DQ,
X
X
x
H
H
L
L
> F-RY/?%
V,,<F-B<V,
F-D’& to F-W,,
executed
a write
High-Z
High-Z
DOUT 1 High-Z
DOUT
DOUT
DIN
DIN
DIN
to W,
High-Z
Bigh-Z
DOUT
,
DIN
F-DQ
operation.
to hu&
Bigh-2
High-Z
High-Z
when
4