lrs1329 Sharp Microelectronics of the Americas, lrs1329 Datasheet - Page 19

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lrs1329

Manufacturer Part Number
lrs1329
Description
Stacked Chip Flash Sram
Manufacturer
Sharp Microelectronics of the Americas
Datasheet
SHARP
iotes)*l.
F?@ Low to Reset during
F-V,, 2.7V to F-B High
AC
F-E Pulse Low Time
applicable.)
Write
(If F-E.is
Reset Operations
Waveform for Reset Oneration
*2. A reset time, t,,.
*3. When the device
F-RY/BY(R)
FRY/BY @)
F-i@(P)
high until
been in predefined
F-B (P)
executing,
F -@ (P)
If F-B
tied to Vcc, this specification
High Z
High Z
is asserted
V III
voL
VI, -
V
V III
V
outputs
the reset will
OL
IL
Parameter
Block Erase or
power-up, holding
is required
are valid.
range and also has been in stable
while a block erase or word/bytewrite
I(
r
(
\
(
t,LPil
t,m
complete with loons.
.
(C)F-E
(A)Reset During Read Array Mode
(B)Reset During Block Erase or Word/Byte Write
I-
/
>
from the later
)
LRS1329
(T,= -25 ‘c to
F-3
is not
Rising
low minimum 1oOns is required
tpu.2
Timing
hz
of F-RY/BY going High Z of
true
SW.
h
+85 ‘c ,
there.
Min.
100
100
Vcc= 2.7V to 3.6 V )
7
>
operation
23.6
Max.
is not
after
Unit
,u s
ns
ns
F-E going
Vcc has
*1,2
*3
17

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