lrs1329 Sharp Microelectronics of the Americas, lrs1329 Datasheet - Page 26

• Manufacturer Part Number: lrs1329
• Description: Stacked Chip Flash Sram
• Manufacturer: Sharp Microelectronics of the Americas

17. Design Considerations
SHARF)
V,,(See 11. DC Characteristics)
Device operations
For example, changing data from “1011110110111101”
“1110111111111110”
4. Power Supply
Block erase,
results
Please do not execute reprogramming
programed “0”. Overwrite
Updating
Use similar
3. The Inhibition
In case of reprogramming
To avoid a bad effect
each device should have a O.lpF
and between its V,,and CND. Low inductance
possible
2. V,,Trace on Printed
that the printed
1. Power Supply Decoupling
and should not be attempted.
* Program “1” for the bit which has already been programmed “0”.
* Program “0” for the bit
to package leads.
the memory contents
trace widths and layout
full
circuit
at invalid
of Overwrite
chip erase, word/byte
programming.
to the system by flash memory power switching
Circuit
board designer
operation
“0” to the data which has been programed “1”.
Vcc voltage(see
of flash memories that reside
Boards
Operation
produce spurious
ceramic capacitor
in which you want to change data from “1” to “0”.
may generate unerasable
considerations
“0” for’the
LRS1329
write
pay attention
capacitors
ll.DC Characteristics)
and lock-bit
bit which has already been
results
to “1010110110111100”
connected between its V, and GND
given to the Vcc power bus.
should be placed as close as
to the Vr, Power Supply trace.
and should not be attempted.
bit.
configuration
in the target
produce spurious
characteristics,
with an invalid
requires
system requires
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