lrs1329 Sharp Microelectronics of the Americas, lrs1329 Datasheet - Page 4

• Manufacturer Part Number: lrs1329
• Description: Stacked Chip Flash Sram
• Manufacturer: Sharp Microelectronics of the Americas

SHARI=
Flash
1. Description
Features
OOptimized
0
SRAM
OAccess
OOperat
OStandby
OData
OPower
OAccess
OOperating
ODeep power down current
0 Extended Cycling
OOperat ing temperature
ONot
0
OFlash
The
flash
Enhanced Automated Suspend Options
72 pin
Memory
designed
LR S 1 3 2 9
memory and
retention
supply
memory has
ing current
Time
Time
current
Array Blocking
current
~100,000 Block
CSP
Two 4X-word/8K-byte
Thirty-one
Block Erase Suspend to Nerd/Byte
Block Erase Suspend to Read
Word/Byte
or rated
current
256K
( LCSPO72-P-0811
(Ihe current
Capabi 1 i ty
P-type bulk silicon,
Read
Word/Byte
Block
is a combination
write
as radiation
32X-word/64K-byte
x8
(The current
erase
Architecture
Erase Cycles
Suspend
bit
write
for
Boot Blocks/
static
.
F-V,
hardened
) plastic
to Read
for F-V,, pin)
Part 1 Overview
LRS1329
memory organized
RAM in one package.
and SRAM has
pin)
. . . .
. . . .
. . . .
. . . .
. . . .
. . . .
Main Blocks/
write
Six 4K-word/8K-byte
package
. . . .
. . . .
100 ns
85 ns
30 d
15 PA (Max.)
15 ,uA (Max.)
3
as lMx16/2M
P-type
. . . - 25 mA (Max.
. . . . 17 mA (Max.)
. . . - 17 mA (Max.)
* * * * 10
mA (Max. t,, t,=lp
Top
OhL >
(Max.)
&ax. >
bulk
-25
2.7 v
Boot Location
Parameter
PA (Max. F-ZZF-Vcc-0.
“c to
silicon.
~8 bit
to
F-EsO.
s)
+85 ‘c
3.6 V
Blocks/
t,U=200ns)
ZV, F-V&O.
2V,
2V)
2