am49dl3208g Advanced Micro Devices, am49dl3208g Datasheet - Page 6

• Manufacturer Part Number: am49dl3208g
• Description: Stacked Multi-chip Package Mcp Flash Memory And Psram 32 Megabit 2 M X 16-bit Cmos 3.0 Volt-only, Simultaneous Operation Flash Memory And 8 Mbit 512 K X 16-bit Pseudo Static Ram
• Manufacturer: Advanced Micro Devices

Flash Erase And Programming Performance . . 56
4
Write Cycle ............................................................................. 53
Controlled ........................................................................................51
Figure 29. Pseudo SRAM Read Cycle ............................................52
Figure 30. Pseudo SRAM Write Cycle—WE#
Control .............................................................................................53
Figure 31. Pseudo SRAM Write Cycle—CE1#s
Control .............................................................................................54
Figure 32. Pseudo SRAM Write Cycle—UB#s and LB#s Control ...55
A D V A N C E
Am49DL3208G
I N F O R M A T I O N
Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 56
Package Pin Capacitance. . . . . . . . . . . . . . . . . . . 56
Flash Data Retention . . . . . . . . . . . . . . . . . . . . . . 56
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 57
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 58
TLB069—69–Ball Fine-Pitch Grid Array
8 x 10 mm ............................................................................... 57
March 12, 2004