am49dl3208g Advanced Micro Devices, am49dl3208g Datasheet - Page 38

• Manufacturer Part Number: am49dl3208g
• Description: Stacked Multi-chip Package Mcp Flash Memory And Psram 32 Megabit 2 M X 16-bit Cmos 3.0 Volt-only, Simultaneous Operation Flash Memory And 8 Mbit 512 K X 16-bit Pseudo Static Ram
• Manufacturer: Advanced Micro Devices

PSEUDO SRAM DC AND
OPERATING CHARACTERISTICS
Notes:
1. T
2. Overshoot: V
3. Undershoot: –1.0V if pulse width
4. Overshoot and undershoot are sampled, not 100% tested.
5. Stable power supply required 200 µs before device operation.
36
Parameter
Symbol
I
I
CC1
CC2
V
V
I
I
V
A
I
V
I
SB1
SB2
I
LO
SB
OH
= –40
LI
OL
IH
IL
s
s
°
Input Leakage Current
Output Leakage Current
Average Operating Current
Average Operating Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Standby Current (TTL)
Standby Current (CMOS)
Standby Current (CMOS)
to 85
CC
+1.0V if pulse width
°
C, otherwise specified.
Parameter Description
≤
A D V A N C E
20 ns.
≤
20 ns.
V
CE1#s = V
V
Cycle time = 1 µs, 100% duty,
I
CE2 ≥ V
V
Cycle time = Min., I
100% duty, CE1#s = V
V
I
I
CE1#s = V
inputs = V
CE1#s=V
Other inputs = V
t
CE1#s=V
Other inputs = V
t
IO
OL
OH
A
A
IN
IH
IN
IH
= 85°C, V
= 85°C, V
Am49DL3208G
= 0 mA, CE1#s ≤ 0.2 V,
, V
= 2.0 mA
= –1.0 mA
= V
or WE# = V
≥ V
IN
I N F O R M A T I O N
SS
CC
= V
CC
Test Conditions
IH
IH
to V
– 0.2 V
IH
IH
IH
, CE2= V
, CE2= V
– 0.2 V, V
IL
CC
CC
, CE2s = V
or V
, CE2 = V
= or V
CC
= 3.0 V
= 3.3 V
IL
IH
IH
IL
, V
or V
or V
IO
IO
IH
IL:
IL:
IN
= V
= 0 mA,
IL
IL
IL:
IL:
IL
≤ 0.2 V or
, Other
, CE2s =
SS
or OE# =
to V
CC
(Note 3)
–1.0
–1.0
–0.2
Min
2.2
2.2
Typ
12
3
V
(Note 2)
March 12, 2004
CC
Max
1.0
1.0
0.4
0.4
0.3
25
60
85
5
+0.2
Unit
mA
mA
mA
µA
µA
µA
µA
V
V
V
V