am49dl3208g Advanced Micro Devices, am49dl3208g Datasheet - Page 44

• Manufacturer Part Number: am49dl3208g
• Description: Stacked Multi-chip Package Mcp Flash Memory And Psram 32 Megabit 2 M X 16-bit Cmos 3.0 Volt-only, Simultaneous Operation Flash Memory And 8 Mbit 512 K X 16-bit Pseudo Static Ram
• Manufacturer: Advanced Micro Devices

FLASH AC CHARACTERISTICS
Flash Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Flash Erase And Programming Performance” section for more information.
42
JEDEC
t
t
t
t
t
t
t
t
t
t
WHWH1
WHWH1
WHWH2
t
t
t
t
t
t
t
DVWH
WHDX
GHWL
EHWH
WHEH
WLWH
AVWL
WLAX
WHDL
GHEL
WLEL
ELWL
ELEH
AVAV
Parameter
t
t
t
t
WHWH1
WHWH1
WHWH2
t
t
t
t
GHWL
t
t
t
OEPH
t
Std
t
GHEL
SR/W
BUSY
t
t
t
t
t
t
WPH
t
ASO
t
t
OEH
t
t
VCS
t
AHT
WC
WH
DH
WS
CH
WP
AS
AH
DS
CS
CP
RB
Description
Write Cycle Time (Note 1)
Address Setup Time (WE# to Address)
Address Setup Time to OE# or
Bit Polling
Address Hold Time (WE# to Address)
Address Hold Time From CE#f or OE# High During Toggle
Bit Polling
Data Setup Time
Data Hold Time
OE# Hold Time
Output Enable High During Toggle Bit Polling
Read Recovery Time Before Write (OE# High to CE#f Low)
Read Recovery Time Before Write (OE# High to WE# Low)
WE# Setup Time (CE#f to WE#)
CE#f Setup Time (WE# to CE#f)
WE# Hold Time (CE#f to WE#)
CE#f Hold Time (CE#f to WE#)
Write Pulse Width
CE#f Pulse Width
Write Pulse Width High
Latency Between Read and Write Operations
Programming Operation (Note 2)
Accelerated Programming Operation,
Word or Byte (Note 2)
Sector Erase Operation (Note 2)
V
Write Recovery Time From RY/BY#
Program/Erase Valid To RY/BY# Delay
CC
f Setup Time (Note 1)
A D V A N C E
Read
Toggle and Data# Polling
Am49DL3208G
I N F O R M A T I O N
CE#f
Low During Toggle
Word
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
Typ
Min
Min
All Speed Options
0.4
70
15
45
35
10
20
30
30
30
50
90
0
0
0
0
0
0
0
0
0
0
0
7
4
0
March 12, 2004
Unit
sec
µs
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns