m52s128324a Elite Semiconductor Memory Technology Inc., m52s128324a Datasheet - Page 9

• Manufacturer Part Number: m52s128324a
• Description: 1m X 32 Bit X 4 Banks Synchronous Dram
• Manufacturer: Elite Semiconductor Memory Technology Inc.

ESMT
MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with MRS
Note :
Elite Semiconductor Memory Technology Inc.
Function
Address
A8
A9
0
0
1
1
0
1
Write Burst Length
A7
1. RFU(Reserved for future use) should stay “0” during MRS cycle.
2. If A9 is high during MRS cycle, “ Burst Read single Bit Write” function will be enabled.
3. The full column burst (256 bit) is available only at sequential mode of burst type.
0
1
0
1
Test Mode
BA0~BA1
Mode Register Set
Single Bit
RFU
Length
Burst
Reserved
Reserved
Reserved
Type
RFU
A11
A6
0
0
0
0
1
1
1
1
A5
CAS Latency
A10/AP
0
0
1
1
0
0
1
1
RFU
A4
0
1
0
1
0
1
0
1
Reserved
Reserved
Reserved
Reserved
Reserved
Latency
W.B.L
1
2
3
A9
A3
A8
0
1
Burst Type
TM
Sequential
Interleave
A7
Type
A6
CAS Latency
Full Page Length : 256
A2
0
0
0
0
1
1
1
1
A5
Publication Date: Mar. 2009
Revision: 1.4
A1
M52S128324A
0
0
1
0
0
1
1
1
A4
Burst Length
A0
0
1
0
1
0
1
0
1
A3
BT
Reserved Reserved
Reserved Reserved
Reserved Reserved
Full Page Reserved
BT = 0
A2
1
2
4
8
Burst Length
9/47
A1
BT = 1
1
2
4
8
A0