m52s128324a Elite Semiconductor Memory Technology Inc., m52s128324a Datasheet - Page 36

• Manufacturer Part Number: m52s128324a
• Description: 1m X 32 Bit X 4 Banks Synchronous Dram
• Manufacturer: Elite Semiconductor Memory Technology Inc.

ESMT
Read & Write Cycle at Different Bank @ Burst Length = 4
D Q
*Note : 1. t
Elite Semiconductor Memory Technology Inc.
C L O C K
A 1 0 / A P
D Q M
W E
A D D R
C L = 2
C L = 3
C K E
C A S
B A 0
R A S
B A 1
C S
2. t
CDL
RCD
0
Row Active
(A-Bank)
R A a
R A a
should be met to complete write.
should be met.
1
t
R C D
2
(A-Bank)
Read
C A a
* N o t e 2
3
4
Q A a 0
5
Row Active
(D-Bank)
Q A a 0
Q A a 1 Q A a 2 Q A a 3
R D b
R B b
6
Precharge
(A-Bank)
Q A a 1 Q A a 2 Q A a 3
7
8
9
H I G H
10
11
( D - B a n k )
W r i t e
D D b 0
D D b 0
C D b
12
Row Active
(B-Bank)
D d b 1 D D b 2 D D d 3
D d b 1 D D b 2 D D d 3
R A c
R B c
13
Publication Date: Mar. 2009
Revision: 1.4
14
M52S128324A
15
t
( B - B a n k )
C D L
R e a d
C B c
16
* N o t e 1
17
: D o n ' t C a r e
Q B c 0 Q B c 1 Q B c 2
18
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Q B c 0 Q B c 1
19