fds8958-nf073 Fairchild Semiconductor, fds8958-nf073 Datasheet - Page 3

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fds8958-nf073

Manufacturer Part Number
fds8958-nf073
Description
Fds8958 Dual N & P-channel Powertrench Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet
Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Electrical Characteristics
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
Symbol
the drain pins. R
d(on)
r
d(off)
f
S
SD
g
gs
gd
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
JC
is guaranteed by design while R
a) 78°/W when
Parameter
mounted on a
0.5 in
copper
2
pad of 2 oz
(Note 2)
CA
Q1
V
V
Q2
V
V
Q1
V
Q2
V
V
V
(continued)
is determined by the user's board design.
DD
GS
DD
GS
DS
DS
GS
GS
= 15 V, I
= -15 V, I
= 10 V, I
= 10V, R
= -10 V, I
= -10V, R
= 0 V, I
= 0 V, I
Test Conditions
b) 125°/W when
S
S
D
D
mounted on a .02 in
pad of 2 oz copper
= 1.3 A
= -1.3 A
GEN
D
D
GEN
= 1 A,
= 7 A, V
= -5 A,V
= -1 A,
= 6
= 6
T
A
= 25°C unless otherwise noted
GS
GS
= 10 V
= -10 V
2
(Note 2)
(Note 2)
Type Min
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
c) 135°/W when mounted on a
minimum pad.
Typ Max Units
-0.76
19.8
12.3
0.74
6.7
9.7
2.5
2.2
2.1
1.9
10
18
16
14
6
5
13.4
19.4
35.6
22.2
-1.3
-1.2
1.3
1.2
12
18
29
12
26
23
FDS8958 Rev A(W)
nC
nC
nC
ns
ns
ns
ns
A
V

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