fds6900asnl Fairchild Semiconductor, fds6900asnl Datasheet - Page 5

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fds6900asnl

Manufacturer Part Number
fds6900asnl
Description
Microsoft Word - Fds6900as.doc
Manufacturer
Fairchild Semiconductor
Datasheet
Typical Characteristics: Q2
10
0.01
100
8
6
4
2
0
0.1
Figure 9. Maximum Safe Operating Area.
10
1
Figure 7. Gate Charge Characteristics.
0
0.1
0.001
0.01
R
I
0.1
SINGLE PULSE
DS(ON)
R
D
0.0001
θ JA
1
=8.2A
V
T
GS
A
= 135
LIMIT
= 25
= 10V
o
o
C/W
C
3
V
D = 0.5
DS
0.2
, DRAIN-SOURCE VOLTAGE (V)
0.1
0.05
0.02
Q
0.01
1
g
, GATE CHARGE (nC)
V
DS
DC
SINGLE PULSE
0.001
= 10V
10s
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
6
1s
Figure 11. Transient Thermal Response Curve.
100ms
15V
10ms
10
20V
1ms
0.01
9
100 µ s
100
12
0.1
t
1
, TIME (sec)
800
600
400
200
50
40
30
20
10
0
0
0.001
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
1
C
rss
0.01
5
V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
10
C
10
oss
t
1
, TIME (sec)
15
1
P(pk)
Duty Cycle, D = t
T
R
R
J
θJA
- T
θJA
10
20
(t) = r(t) * R
100
A
= 135 °C/W
t
1
C
= P * R
t
2
iss
SINGLE PULSE
R
θ JA
FDS6900AS Rev B (X)
T
A
= 135°C/W
100
θJA
= 25°C
25
θJA
1
(t)
V
/ t
f = 1MHz
GS
2
= 0 V
1000
1000
30

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