fds6900asnl Fairchild Semiconductor, fds6900asnl Datasheet

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fds6900asnl

Manufacturer Part Number
fds6900asnl
Description
Microsoft Word - Fds6900as.doc
Manufacturer
Fairchild Semiconductor
Datasheet
FDS6900AS
Dual N-Ch PowerTrench
General Description
The FDS6900AS is designed to replace two single SO-
8 MOSFETs and Schottky diode in synchronous DC:DC
power supplies that provide various peripheral voltages
for notebook computers and other battery powered
electronic devices. FDS6900AS contains two unique
30V, N-channel, logic level, PowerTrench MOSFETs
designed to maximize power conversion efficiency.
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the low-
side switch (Q2) is optimized to reduce conduction
losses. Q2 also includes an integrated Schottky diode
using Fairchild’s monolithic SyncFET technology.
©2005 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
Symbol
D
J
DSS
GSS
D
θJA
θJC
, T
Device Marking
FDS6900AS
FDS6900AS
STG
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Pin 1
D
G1
S1D2
D
FDS6900AS_NL
S1D2
SO-
D
- Continuous
- Pulsed
FDS6900AS
S1D2
D
Device
Parameter
®
D1
S
SyncFET
D1
S
(Note 4)
G2
S
S2
T
G
A
= 25°C unless otherwise noted
Reel Size
13”
13”
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
Features
Q2:
Q1:
6.9A, 30V
100% R
8.2A, 30V
Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
Optimized for low switching losses
Low Gate Charge (11nC typical)
G
Q2
±20
8.2
30
30
(Gate Resistance) Tested
1
2
4
3
Tape width
R
R
R
R
–55 to +150
12mm
12mm
DS(on)
DS(on)
DS(on)
DS(on)
Q1
Q2
Dual N-Channel SyncFet
1.6
0.9
78
40
2
1
= 22mΩ @ V
= 28mΩ @ V
= 27mΩ @ V
= 34mΩ @ V
Q1
±20
6.9
30
20
5
8
7
6
GS
GS
GS
GS
May 2005
FDS6900AS Rev B(X)
= 10V
= 4.5V
= 10V
= 4.5V
2500 units
2500 units
Quantity
Units
°C/W
°C/W
°C
W
V
V
A

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fds6900asnl Summary of contents

Page 1

... STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient R θJA Thermal Resistance, Junction-to-Case R θJC Package Marking and Ordering Information Device Marking Device FDS6900AS FDS6900AS FDS6900AS FDS6900AS_NL ©2005 Fairchild Semiconductor Corporation ® ™ SyncFET Features • Q2: 8.2A, 30V • Q1: 6.9A, 30V • 100 ...

Page 2

Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown DSS Voltage ∆BV Breakdown Voltage DSS ∆T Temperature Coefficient J I Zero Gate Voltage Drain DSS Current I Gate-Body Leakage GSS On Characteristics (Note 2) V Gate Threshold Voltage GS(th) ∆V ...

Page 3

Electrical Characteristics Symbol Parameter Switching Characteristics Q (TOT) Total Gate Charge at Vgs=10V Total Gate Charge at Vgs= Gate–Source Charge Q gd Gate–Drain Charge Drain–Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain-Source Diode ...

Page 4

Typical Characteristics 10V 4.0V GS 3.5V 6.0V 4. 0 DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics 10V GS 1.4 1.2 ...

Page 5

Typical Characteristics =8. 10V DS 6 15V GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 100 R LIMIT DS(ON) 10 10ms 100ms 1s 1 ...

Page 6

Typical Characteristics 10V 3.5V GS 4.0V 16 6.0V 4. 0.4 0.8 1 DRAIN TO SOURCE VOLTAGE (V) DS Figure 12. On-Region Characteristics ...

Page 7

Typical Characteristics 6. 10V DS 6 15V GATE CHARGE (nC) g Figure 18. Gate Charge Characteristics. 100 R LIMIT DS(ON) 10 10ms 100ms ...

Page 8

Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 23 shows the reverse recovery ...

Page 9

Typical Characteristics DUT vary t to obtain P 0.01Ω required peak I AS Figure 26. Unclamped Inductive Load Test Circuit Drain Current Same type as + 50kΩ ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...

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