fds6990s Fairchild Semiconductor, fds6990s Datasheet
fds6990s
Available stocks
Related parts for fds6990s
fds6990s Summary of contents
Page 1
... FDS6990S Dual 30V N-Channel PowerTrench SyncFET General Description The FDS6990S is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low R and low gate charge. DS(ON) includes integrated Schottky diodes using Fairchild’s monolithic SyncFET technology ...
Page 2
... C 17 =125 1233 344 106 2.9 0.5 0.7 (Note 2) 17 (Note 3) 12.5 c) 135°C/W when mounted on a minimum pad. FDS6990S Rev B ( ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 4.5V 5.0V 6.0V 8.0V 10V DRAIN CURRENT ( 3. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage -55 C 0.2 0.4 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6990S Rev B ( 0.8 ...
Page 4
... V , DRAIN TO SOURCE VOLTAGE ( SINGLE PULSE R = 135°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( 135 °C/W JA P(pk ( Duty Cycle 100 1000 FDS6990S Rev B (W) ...
Page 5
... Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS6990S. 10ns/div Figure 12. FDS6990S SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6990A) ...
Page 6
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DenseTrench™ ...