2n7000-d26z Fairchild Semiconductor, 2n7000-d26z Datasheet - Page 5

• Manufacturer Part Number: 2n7000-d26z
• Description: 2n7000 / 2n7002 / Nds7002a N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Typical Electrical Characteristics
V
GS
6 0
4 0
2 0
1 0
5
2
1
1.075
1.025
0.975
0.925
Figure 11.
1
Figure 9. Capacitance Characteristics
1.05
0.95
Figure 7. Breakdown Voltage Variation
1.1
1
-50
I
R
D
with Temperature
GEN
f = 1 MHz
V
= 250µA
-25
2
GS
V
DS
= 0V
3
T , JUNCTION TEM PERATURE (°C)
, DRAIN TO SOURCE VOLTAGE (V)
0
J
V
IN
G
5
25
50
D
S
V
1 0
DD
75
R
2N7000 / 2N7002 /NDS7002A
L
DUT
100
2 0
(continued)
C iss
C oss
3 0
125
V
C rss
OUT
150
5 0
Figure 8. Body Diode Forward Voltage Variation with
Output, V out
Input, V in
0 .0 0 5
0 .0 0 1
1 0
Figure 12. Switching Waveforms
Figure 10. Gate Charge Characteristics
0 .0 5
0 .0 1
8
6
4
2
0
0 .5
0 .1
0
t
2
1
d(on)
0 .2
10%
V
V
I
D
T = 1 2 5 ° C
DS
GS
J
= 5 0 0 m A
0 .4
= 2 5 V
0 .4
V
= 0V
SD
t
50%
1 1 5 m A
on
10%
, BODY DIODE FORW A RD VOLTAGE (V)
Q
2 8 0 m A
t
0 .6
Pulse Width
90%
r
g
0 .8
, GATE CHARGE (nC)
2 5 ° C
0 .8
t
d(off)
1 .2
50%
-5 5 ° C
1
90%
t
10%
off
90%
1 .6
2N7000.SAM Rev. A1
1 .2
t
Inverted
f
1 .4
2