2n7000-d26z Fairchild Semiconductor, 2n7000-d26z Datasheet - Page 4

• Manufacturer Part Number: 2n7000-d26z
• Description: 2n7000 / 2n7002 / Nds7002a N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Typical Electrical Characteristics
1.6
1.2
0.8
0.4
2
0
1 .5
0 .5
1.75
1.25
0.75
0
1.5
0.5
2
1
0
Figure 3. On-Resistance Variation
Figure 5. Transfer Characteristics
2
1
0
Figure 1. On-Region Characteristics
-5 0
V
DS
with Temperature
I
V
-2 5
= 10V
D
GS
= 500m A
2
1
= 10V
V
GS
V
0
T , JUNCTION T EMPERATURE (°C)
DS
, GATE TO SOURCE VOLTAGE (V)
J
, DRAIN-SOURCE VOLTAGE (V)
V
GS
4
25
2
= 10V
T
50
J
= -55°C
6
9.0
3
7 5
2N7000 / 2N7002 / NDS7002A
8.0
7.0
1 0 0
25°C
8
4
6.0
5.0
1 2 5
1 2 5 ° C
4.0
3.0
1 5 0
10
5
1 .0 5
0 .9 5
0 .8 5
2 .5
1 .5
0 .5
1 .1
0 .9
0 .8
2 .5
1 .5
0 .5
3
2
1
0
Figure 4. On-Resistance Variation with Drain
Figure 6. Gate Threshold Variation with
Figure 2. On-Resistance Variation with Gate
1
3
2
1
-50
0
0
V
GS
Current and Temperature
Temperature
V
Voltage and Drain Current
=4.0V
-25
GS
= 10V
0 .4
0 .4
0
T , JUNCTION TEM PERATURE (°C)
4 .5
J
T = 1 2 5 ° C
J
I , DRAIN CURRENT (A)
I
D
D
5 .0
2 5
, DRA IN CURRENT (A)
0 .8
0 .8
2 5 ° C
5 0
-55°C
6 .0
1 .2
1 .2
7 5
1 0 0
I
V
D
7 .0
DS
1 .6
1 .6
= 1 m A
= V
2N7000.SAM Rev. A1
8 .0
1 2 5
GS
9 .0
1 0
1 5 0
2
2