fdms869007 Fairchild Semiconductor, fdms869007 Datasheet - Page 3

• Manufacturer Part Number: fdms869007
• Description: N-channel Power Trench Mosfet 9.0m
• Manufacturer: Fairchild Semiconductor

FDMS8690 Rev.C2
Typical Characteristics
100
80
60
40
20
100
1.6
1.4
1.2
1.0
0.8
0.6
0
80
60
40
20
1.0
Figure 3. Normalized On- Resistance
0
Figure 1.
-75
0.0
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
-50
V
vs Junction Temperature
1.5
GS
0.5
V
T
, GATE TO SOURCE VOLTAGE (V)
DS
T
J
-25
J
, JUNCTION TEMPERATURE
On-Region Characteristics
, DRAIN TO SOURCE VOLTAGE (V)
= 25
2.0
T
o
V
1.0
J
C
0
GS
= 150
V
= 4.5V
GS
µ
25
s
o
C
2.5
µ
= 10V
S
1.5
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
50
T
T
J
J
=-55
= 25°C unless otherwise noted
3.0
2.0
75
o
C
V
I
D
GS
100 125 150
V
= 14A
V
(
GS
= 10V
3.5
o
GS
C
2.5
)
= 3.5V
= 3V
µ
s
4.0
3.0
3
0.01
200
100
0.1
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
10
20
16
12
1
0.2
8
4
Figure 2.
Figure 4.
Forward Voltage vs Source Current
0
2
vs Drain Current and Gate Voltage
Figure 6.
V
T
V
GS
J
SD
V
= 150
V
GS
= 0V
, BODY DIODE FORWARD VOLTAGE (V)
GS
0.4
= 3V
20
Normalized On-Resistance
o
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
C
I
D
Source Voltage
4
Source to Drain Diode
, DRAIN CURRENT(A)
V
I
D
T
V
T
GS
V
J
= 14A
J
GS
GS
= 150
= 25
= 3.5V
0.6
= 4.5V
= 10V
40
o
o
C
C
6
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
0.8
60
T
J
= -55
T
8
o
J
1.0
C
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= 25
80
o
C
µ
µ
s
s
1.2
100
10