tc58nvg0s3eta00 TOSHIBA Semiconductor CORPORATION, tc58nvg0s3eta00 Datasheet - Page 5

• Manufacturer Part Number: tc58nvg0s3eta00
• Description: 1 Gbit 128m ? 8 Bit Cmos Nand E2prom
• Manufacturer: TOSHIBA Semiconductor CORPORATION

AC CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS
(Ta = 0 to 70℃, V
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
tCEA
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
*1: tCLS and tALS can not be shorter than tWP
*2: tCS should be longer than tWP + 8ns.
CLS
CLH
CS
CH
WP
ALS
ALH
DS
DH
WC
WH
WW
RR
RW
RP
RC
REA
CLR
AR
RHOH
RLOH
RHZ
CHZ
CSD
REH
IR
RHW
WHC
WHR
R
DCBSYR1
DCBSYR2
WB
RST
SYMBOL
CLE Setup Time
CLE Hold Time
Write Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
Ready to RE Falling Edge
Ready to WE Falling Edge
Read Pulse Width
Read Cycle Time
CLE Low to RE Low
ALE Low to RE Low
Output-High-impedance-to- RE Falling Edge
Memory Cell Array to Starting Address
Data Cache Busy in Read Cache (following 31h and
3Fh)
Data Cache Busy in Page Copy (following 3Ah)
Device Reset Time (Ready/Read/Program/Erase)
RE Access Time
RE High to Output Hold Time
RE Low to Output Hold Time
RE High to Output High Impedance
RE High Hold Time
RE High to WE Low
CE Setup Time
CE Hold Time
WE High Hold Time
WP High to WE Low
CE Access Time
CE High to Output High Impedance
CE High to ALE or CLE Don’t Care
WE High to CE Low
WE High to RE Low
WE High to Busy
CC
= 2.7 to 3.6V)
PARAMETER
5
MIN
100
⎯
12
20
12
12
12
25
10
20
20
12
25
10
10
22
10
30
30
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5
5
5
5
5
0
0
TC58NVG0S3ETA00
6/6/10/500
MAX
100
20
25
60
20
30
30
35
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2010-01-25C
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µ s
µ s
µ s
ns
µ s