tc58nvg0s3eta00 TOSHIBA Semiconductor CORPORATION, tc58nvg0s3eta00 Datasheet - Page 40

• Manufacturer Part Number: tc58nvg0s3eta00
• Description: 1 Gbit 128m ? 8 Bit Cmos Nand E2prom
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Multi Page Program with Data Cache
operation compared to Auto Page Program with Data Cache as shown below. When the block address changes
(increments) this sequenced has to be started from the beginning.
of Auto Program with Data Cache, refer to “Auto Page Program with Data Cache”.
The device has a Multi Page Program with Data Cache operation, which enables even higher speed program
The sequence of command, address and data input is shown below. (Refer to the detailed timing chart.)
After “15h” or “10h” Program command is input to device, physical programing starts as follows. For details
Data input
command
RY
/
Selected
BY
80
page
(District 0)
Address
Program
input
/WE following input of the “15h” or “10h” command. After programming, the programmed data is
transferred back to the register to be automatically verified by the device. If the programming does not
succeed, the Program/Verify operation is repeated by the device until success is achieved or until the
maximum loop number set in the device is reached.
The data is transferred (programmed) from the page buffer to the selected page on the rising edge of
Data input
0 to 2111
District 0
command
Program
Dummy
11
Reading & verification
for multi-page
Data input
command
program
81
(District 1)
Address
input
District 1
Program with
Data input
Data Cache
0 to 2111
command
15
40
Data input
command
80
(District 0)
Address
input
Data input
0 to 2111
command
Program
Dummy
11
TC58NVG0S3ETA00
for multi-page
Data input
command
program
81
(District1)
Address
input
2010-01-25C
Data input
0 to 2111
Auto Page
command
Program
10