tc58nvg0s3eta00 TOSHIBA Semiconductor CORPORATION, tc58nvg0s3eta00 Datasheet - Page 35

no-image

tc58nvg0s3eta00

Manufacturer Part Number
tc58nvg0s3eta00
Description
1 Gbit 128m ? 8 Bit Cmos Nand E2prom
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TC58NVG0S3ETA00
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
TC58NVG0S3ETA00
0
Company:
Part Number:
TC58NVG0S3ETA00
Quantity:
830
Part Number:
tc58nvg0s3eta00B3H
Manufacturer:
TOSH
Quantity:
4 552
Part Number:
tc58nvg0s3eta00B3H
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Part Number:
tc58nvg0s3eta00B3H
Quantity:
6 000
(3) Notes
(a) Internal addressing in relation with the Districts
(b) Address input restriction for the Multi Page Read operation
(Restriction)
Maximum one block should be selected from each District.
Same page address (PA0 to PA5) within two districts has to be selected.
For example;
(60) [District 0, Page Address 0x0000] (60) [District 1, Page Address 0x0040] (30)
(60) [District 0, Page Address 0x0001] (60) [District 1, Page Address 0x0041] (30)
(Acceptance)
There is no order limitation of the District for the address input.
For example, following operation is accepted;
(60) [District 0] (60) [District 1] (30)
(60) [District 1] (60) [District 0] (30)
It requires no mutual address relation between the selected blocks from each District.
(c)
Make sure
To use Multi Page Read operation, the internal addressing should be considered in relation with the District.
There are following restrictions in using Multi Page Read;
WP
The device consists from 2 Districts.
Each District consists from 512 erase blocks.
The allocation rule is follows.
District 0: Block 0, Block 2, Block 4, Block 6,···, Block 1022
District 1: Block 1, Block 3, Block 5, Block 7,···, Block 1023
signal
WP
is held to High level when Multi Page Read operation is performed
35
TC58NVG0S3ETA00
2010-01-25C

Related parts for tc58nvg0s3eta00