tda8035hn NXP Semiconductors, tda8035hn Datasheet - Page 23

• Manufacturer Part Number: tda8035hn
• Description: Smart Card Interface
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 7.
V
[1]
[2]
[3]
TDA8035HN
Product data sheet
Symbol
T
I
I
Timings
t
t
t
t
Olim
sd
act
deact
act
deb
DDP
sd
To meet these specifications, V
either 220 nF.
The transition time and the duty factor definitions are shown in
PRESN and CMDVCCN are active LOW; RSTIN is active HIGH; for CLKDIV1 and CLKDIV2 see Table 4.
= 3.3 V; V
Characteristics of IC
DD(INTF)
Parameter
shutdown temperature
output current limit
shutdown current
activation time
deactivation time
activation time
debouncing time
= 3.3 V; f
Fig 12. Definition of output and input transition times
Xtal
CC
…continued
should be decoupled to CGND using two ceramic multilayer capacitors of low ESR with values of
= 10 MHz; GND = 0 V; T
All information provided in this document is subject to legal disclaimers.
Conditions
at die
on pin I/O
on pin CLK
on pin RST
on pin V
on pin V
on pin V
on pin V
see
see
time of the window for sending CLK
to the card with XTAL1
on pin PRESN
t
page 13
t
page 13
act(start)
act(end
Figure 8 on page 13
Figure 9 on page 14
90%
Rev. 1.0 — 19 April 2011
t
r
CC
CC
CC
CC
)=t5; see
10%
= t3; see
= 5 V or 1.8 V
= 3 V
= 5 V or 1.8 V
= 3 V
t
Figure 12 on page
1
amb
Figure 8 on
10%
=25
Figure 8 on
90%
t
°
f
C; unless otherwise specified
t
2
23.; d=t1/(t1+ t2)
Min
-
−15
−70
−20
90
90
80
80
1847
35
1992
2055
2.96
Typ
150
-
-
-
125
160
115
150
-
90
2690
2766
4.05
V
(V
V
TDA8035HN
OH
OL
OH
+ V
Smart card interface
fce666
OL
© NXP B.V. 2011. All rights reserved.
) /2
5.55
Max
-
+15
+70
+20
160
260
150
250
3390
250
3653
3749
Unit
°C
mA
mA
mA
mA
mA
mA
mA
μs
μs
μs
μs
ms
23 of 32