mt4lc4m16r6 Micron Semiconductor Products, mt4lc4m16r6 Datasheet - Page 5

• Manufacturer Part Number: mt4lc4m16r6
• Description: 4 Meg X 16 Edo Dram
• Manufacturer: Micron Semiconductor Products

ADDR
4 Meg x 16 EDO DRAM
D29_2.p65 – Rev. 5/00
ADDR
RAS#
CAS#
RAS#
CAS#
WE#
OE#
DQ
OE#
DQ
V
V
V
V
V
V
IOH
IOL
V
V
IOH
IOL
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
ROW
ROW
OPEN
OPEN
COLUMN (A)
COLUMN (A)
VALID DATA (A)
The DQs go back to
Low-Z if
t OD
t OES
VALID DATA (A)
t OE
The DQs go to High-Z if WE# falls and, if
will remain High-Z until CAS# goes LOW with
WE# HIGH (i.e., until a READ cycle is initiated).
t
OES is met.
WE# Control of DQs
OE# Control of DQs
t WHZ
VALID DATA (A)
t WPZ
COLUMN (B)
Figure 3
Figure 4
5
COLUMN (B)
VALID DATA (B)
t
t OD
WPZ is met,
The DQs remain High-Z
until the next CAS# cycle
if
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t OEHC
t
OEHC is met.
VALID DATA (B)
COLUMN (C)
WE# may be used to disable the DQs to prepare
for input data in an EARLY WRITE cycle. The DQs
will remain High-Z until CAS# goes LOW with
WE# HIGH (i.e., until a READ cycle is initiated).
t WHZ
VALID DATA (C)
COLUMN (C)
INPUT DATA (C)
The DQs remain High-Z
until the next CAS# cycle
if
t OEP
t
OEP is met.
t OD
4 MEG x 16
EDO DRAM
©2000, Micron Technology, Inc.
COLUMN (D)
DON’T CARE
UNDEFINED
VALID DATA (D)
COLUMN (D)