mt4lc4m16r6 Micron Semiconductor Products, mt4lc4m16r6 Datasheet - Page 10

• Manufacturer Part Number: mt4lc4m16r6
• Description: 4 Meg X 16 Edo Dram
• Manufacturer: Micron Semiconductor Products

AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 10, 11, 12) (V
4 Meg x 16 EDO DRAM
D29_2.p65 – Rev. 5/00
AC CHARACTERISTICS
PARAMETER
EDO-PAGE-MODE READ or WRITE cycle time
EDO-PAGE-MODE READ-WRITE cycle time
Access time from RAS#
RAS# to column-address delay time
Row address hold time
RAS# pulse width
RAS# pulse width (EDO PAGE MODE)
RAS# pulse width during Self Refresh
Random READ or WRITE cycle time
RAS# to CAS# delay time
READ command hold time (referenced to CAS#)
READ command setup time
Refresh period
Refresh period (“S” version)
RAS# precharge time
RAS# to CAS# precharge time
RAS# precharge time exiting Self Refresh
READ command hold time (referenced to RAS#)
RAS# hold time
READ-WRITE cycle time
RAS# to WE# delay time
WRITE command to RAS# lead time
Transition time (rise or fall)
WRITE command hold time
WRITE command hold time (referenced to RAS#)
WE# command setup time
WE# to outputs in High-Z
WRITE command pulse width
WE# pulse widths to disable outputs
WE# hold time (CBR Refresh)
WE# setup time (CBR Refresh)
CC
= +3.3V ±0.3V)
SYMBOL
t
t
t
t
t
t
t
PRWC
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RASP
RASS
t
t
RWD
WCH
WRH
t
t
t
RWC
WCR
WHZ
t
WRP
RAD
RAH
RWL
WCS
WPZ
RAC
RCD
RCH
RRH
t
RAS
t
t
RPC
RSH
RCS
REF
REF
RPS
WP
RC
PC
RP
t
T
10
MIN
100
116
20
47
50
50
84
11
30
90
13
67
13
38
10
9
7
0
0
5
0
8
0
5
8
8
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
-5
125,000
10,000
MAX
128
50
64
50
12
MIN
100
104
105
140
25
56
12
10
60
60
14
40
15
79
15
10
45
10
10
10
0
0
5
0
2
0
5
-6
125,000
10,000
MAX
128
60
64
50
15
4 MEG x 16
EDO DRAM
UNITS
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
©2000, Micron Technology, Inc.
NOTES
14, 28
16, 30
22, 23
18, 28
34
34
15
28
23
16
35
18
35