mt48h16m32lfcm-75-it Micron Semiconductor Products, mt48h16m32lfcm-75-it Datasheet - Page 26

• Manufacturer Part Number: mt48h16m32lfcm-75-it
• Description: 512mb 32 Meg X 16, 16 Meg X 32 Mobile Sdram Features
• Manufacturer: Micron Semiconductor Products

NO OPERATION (NOP)
LOAD MODE REGISTER (LMR)
ACTIVE
Figure 9:
READ
PDF: 09005aef82ea3742/Source: 09005aef82ea3752
sdr_mobile_sdram_cmd_op_timing_dia_fr4.08__4.fm - Rev. B 4/08 EN
ACTIVE Command
The NO OPERATION (NOP) command is used to perform a NOP to an SDRAM which is
selected (CS# is LOW). This prevents unwanted commands from being registered during
idle or wait states. Operations already in progress are not affected.
The mode register is loaded via inputs A[0:n] (where An is the most significant address
term), BA0, and BA1(See “Mode Register” on page 37). The LOAD MODE REGISTER
command can only be issued when all banks are idle and a subsequent executable
command cannot be issued until
The ACTIVE command is used to open (or activate) a row in a particular bank for a
subsequent access. The value on the BA0, BA1 inputs selects the bank, and the address
provided selects the row. This row remains active (or open) for accesses until a
PRECHARGE command is issued to that bank. A PRECHARGE command must be issued
before opening a different row in the same bank. Figure 9 shows the ACTIVE command.
The READ command is used to initiate a burst read access to an active row. The value on
the BA0, BA1 inputs selects the bank, and the address provided selects the starting
column location. The value on input A10 determines whether or not auto precharge is
used. If auto precharge is selected, the row being accessed is precharged at the end of the
read burst; if auto precharge is not selected, the row remains open for subsequent
BA0, BA1
Address
RAS#
CAS#
WE#
CKE
CLK
CS#
HIGH
Address
Address
Bank
Row
26
t
MRD is met.
Don’t Care
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SDR Mobile SDRAM
Commands