SBT80-06GS Sanyo Semiconductor Corporation, SBT80-06GS Datasheet - Page 2

• Manufacturer Part Number: SBT80-06GS
• Description: Schottky Barrier Diode Twin Type ? Cathode Common
• Manufacturer: Sanyo Semiconductor Corporation

Electrical Characteristics at Ta=25°C
Note) * : Value per element
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Thermal Resistance
170
160
150
140
130
120
110
100
1.0
0.1
10
10
90
80
70
2
7
5
3
2
7
5
3
2
8
6
4
2
0
0
0
0
Represented by max
Sine
wave
(1)Rectangular wave θ =60 °
(2)Rectangular wave θ =120 °
(3)Rectangular wave θ =180 °
(4)Sine wave θ =180 °
Rectangular
wave
Rectangular
wave
θ
1
1
360°
Parameter
180°
2
2
θ
Average Output Current, I O -- A
360°
Average Output Current, I O -- A
Forward Voltage, V F -- V
3
3
0.5
360°
P F (AV) -- I O
(1)Rectangular wave θ =60 °
(2)Rectangular wave θ =120 °
(3)Rectangular wave θ =180 °
(4)Sine wave θ =180 °
4
4
I F -- V F
Tc -- I O
(1)
5
5
(1)
6
6
V R
V F
I R
C
Rth(j-c)
1.0
Symbol
(2)
Sine wave
7
7
(2)
180°
(4)
360°
8
8
(4)
I R =1mA, Tj=25°C *
I F =3.0A, Tj=25°C *
V R =30V, Tj=25°C *
V R =10V, Tj=25°C *
Junction-Case : Smoothed DC
(3)
IT08385
IT08387
IT12855
9
9
(3)
SBT80-06GS
1.5
10
10
Conditions
100
100
1.0
10
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
5
3
2
7
5
7
5
3
2
7
5
3
2
7
5
0
1.0
0
0
(1)Rectangular wave θ =300 °
(2)Rectangular wave θ =240 °
(3)Rectangular wave θ =180 °
(4)Sine wave θ =180 °
Rectangular
wave
Sine wave
180°
360°
10
10
2
θ
Peak Reverse Voltage, V RM -- V
360°
3
V R
20
20
Reverse Voltage, V R -- V
Reverse Voltage, V R -- V
P R (AV) -- V RM
min
V R
5
I R -- V R
60
C -- V R
30
30
7
10
Ratings
typ
40
40
130
P R max at Tj=150 ° C
2
50
50
max
3
0.58
0.1
4.6
No. A0798-2/3
f=100kHz
60
60
5
(4)
(1)
(2)
(3)
IT08386
IT08388
IT08495
°C / W
7
Unit
mA
pF
V
V
100
70
70