SBT80-06GS Sanyo Semiconductor Corporation, SBT80-06GS Datasheet
SBT80-06GS
Related parts for SBT80-06GS
SBT80-06GS Summary of contents
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... Package Dimensions unit : mm (typ) 7530-002 10.2 3.6 1.2 0 2.55 2.55 2.55 2.55 SBT80-06GS SANYO Semiconductors Schottky Barrier Diode (Twin Type • Cathode Common) 60V, 8A Rectifi er Low forward voltage (V F max=0.58V) • Low switching noise • Symbol Conditions V RRM V RSM 50Hz resistive load, sine wave Tc=112°C ...
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... Sine wave 80 360° 180° Average Output Current SBT80-06GS Symbol Conditions =1mA, Tj=25° =3.0A, Tj=25° =30V, Tj=25° =10V, Tj=25°C * Rth(j-c) Junction-Case : Smoothed DC 100 ...
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... SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2010. Specifi cations and information herein are subject to change without notice. SBT80-06GS 10 7 Tj=150°C 5 ...