SBT80-04Y Sanyo Semiconductor Corporation, SBT80-04Y Datasheet
SBT80-04Y
Manufacturer Part Number
SBT80-04Y
Description
Schottky Barrier Diode Twin Type ? Cathode Common
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
1.SBT80-04Y.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SBT80-04Y-DL-E
Manufacturer:
SANYO
Quantity:
7 000
Part Number:
SBT80-04Y-DL-E
Manufacturer:
SONY/索尼
Quantity:
20 000
Ordering number : ENN7789
SBT80-04Y
Applications
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Note) * : Value per element
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Thermal Resistance
•
•
•
•
•
•
•
High frequency rectification (switching regulators, converters and choppers).
Guaranteed up to Tj=150 C.
Low forward voltage (V F max=0.55V).
Fast reverse recovery time.
Low switching noise.
High reliability due to highly reliable planar structure.
Surface mount type device reducing the assembling time and facilitating compact and high-density assembly of
SBT80-04Y-applied equipment.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
Symbol
Symbol
Rth(j-c)
V RRM
V RSM
I FSM
Tstg
V R
V F
I O
I R
Tj
C
Schottky Barrier Diode (Twin Type · Cathode Common)
40V, 8A Rectifier
50Hz resistive load, Sine wave Tc=116 C
50Hz sine wave, 1 cycle
I R =1mA, Tj=25 C*
I F =3A, Tj=25 C*
V R =20V, Tj=25 C*
V R =10V, Tj=25 C*
Junction-Case : Smoothed DC
SBT80-04Y
Conditions
Conditions
62405SD MS IM TB-00001571
min
40
Ratings
typ
Ratings
160
--55 to +150
--55 to +150
max
0.55
0.1
4.0
40
44
80
8
No.7789-1/3
C / W
Unit
Unit
mA
pF
V
V
A
A
V
V
C
C
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SBT80-04Y Summary of contents
Page 1
... High reliability due to highly reliable planar structure. • Surface mount type device reducing the assembling time and facilitating compact and high-density assembly of • SBT80-04Y-applied equipment. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage ...
Page 2
... P F (AV Sine wave 6 180 (1) 360 5 Rectangular wave 4 3 360 2 (1)Rectangular wav e =60 (2)Rectangular wav e =120 1 (3)Rectangular wav e =180 (4)Sine wav e =180 Average Output Current SBT80-04Y 4.5 1 0.3 0 Anode 2 : Cathode 3 : Anode SANYO : SMP-FD 100 10 1.0 1.2 1.6 IT08506 3.0 (3) (4) (2) 2.5 2.0 1.5 1.0 0 ...
Page 3
... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. SBT80-04Y 1000 ...