SBT80-06J Sanyo Semiconductor Corporation, SBT80-06J Datasheet
SBT80-06J
Manufacturer Part Number
SBT80-06J
Description
Schottky Barrier Diode Twin Type ? Cathode Common
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
1.SBT80-06J.pdf
(3 pages)
Ordering number : ENN8225
SBT80-06J
Applications
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Note) * : Value per element
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Thermal Resistance
•
•
•
•
•
•
•
High frequency rectification (switching regulators, converters, choppers).
Guaranteed up to Tj=150 C.
Low forward voltage (V F max=0.58V).
Short reverse recovery time.
Low switching noise.
High reliability due to highly reliable planar structure.
Attachment workability is good by Mica-less package.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
Symbol
Symbol
Rth(j-c)
V RRM
V RSM
I FSM
Tstg
V R
V F
I O
I R
Tj
C
Schottky Barrier Diode (Twin Type · Cathode Common)
60V, 8A Rectifier
50Hz resistive load, Sine wave, Tc=109 C
50Hz sine wave, 1 cycle
I R =1mA, Tj=25 C*
I F =3.0A, Tj=25 C*
V R =30V, Tj=25 C*
V R =10V, Tj=25 C*
Junction-Case : Smoothed DC
SBT80-06J
Conditions
Conditions
31505SD TS IM TB-00001167
min
60
Ratings
typ
Ratings
130
--55 to +150
--55 to +150
max
0.58
0.1
5.0
60
66
80
8
No.8225-1/3
C / W
Unit
Unit
mA
pF
V
V
A
A
V
V
C
C
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SBT80-06J Summary of contents
Page 1
... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN SBT80-06J Schottky Barrier Diode (Twin Type · Cathode Common) 60V, 8A Rectifier Symbol Conditions ...
Page 2
... Forward Voltage (AV (1)Rectangular wav e =60 (2)Rectangular wav e =120 (3)Rectangular wav e =180 8 (4)Sine wav e =180 (1) Rectangular 6 wave 4 360 Average Forward Current SBT80-06J 100 10 1.0 1.0 1.5 IT08385 4.5 4.0 (3) 3.5 (4) (2) 3.0 2.5 2.0 1.5 Sine wave 1.0 180 0.5 360 IT08387 ...
Page 3
... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2005. Specifications and information herein are subject to change without notice. SBT80-06J (4) ...