SBT80-10GS Sanyo Semiconductor Corporation, SBT80-10GS Datasheet
SBT80-10GS
Related parts for SBT80-10GS
SBT80-10GS Summary of contents
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... Package Dimensions unit : mm (typ) 7530-002 10.2 3.6 1.2 0 2.55 2.55 2.55 2.55 SBT80-10GS SANYO Semiconductors Schottky Barrier Diode (Twin Type • Cathode Common) 100V, 8A Rectifi er Low forward voltage (V F max=0.80V) • Low switching noise • Symbol Conditions V RRM V RSM 50Hz resistive load, sine wave Tc=86°C ...
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... Sine wave 110 90 70 Rectangular wave 50 (1) θ 360° Average Output Current SBT80-10GS Symbol Conditions =1mA, Tj=25° =3.0A, Tj=25° =50V, Tj=25° =10V, Tj=25°C * Rth(j-c) Junction-Case : Smoothed DC 100 ...
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... SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2010. Specifi cations and information herein are subject to change without notice. SBT80-10GS 20ms ...