EMD12164P Emlsi Inc., EMD12164P Datasheet - Page 6

• Manufacturer Part Number: EMD12164P
• Description: 512m 32m X 16 Mobile Ddr Sdram
• Manufacturer: Emlsi Inc.

Electrical Specifications
Table 3: ABSOLUTE MAXIMUM RATINGS
NOTE :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Table 4: DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
NOTE :
1. Under all conditions, VDDQ must be less than or equal to VDD.
2. These parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in simulation.
Table 5: CAPACITANCE
Voltage on any pin relative to V
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Output leakage current
Input capacitance
(ADD, BA0~1, RASB, CASB, WEB, CSB, CKE)
Input capacitance(CK, CKB)
Data & DQS input/output capacitance
Input capacitance(DM)
Parameter
DD
and V
Parameter
DDQ
Pin
supply relative to V
SS
Symbol
(V
V
V
V
V
V
I
V
DDQ
DD
I
LO
OH
DD
OL
LI
IH
IL
= 1.8V, V
SS
0.8 x V
0.9 x V
DDQ
Min
-0.3
1.7
1.7
-2
-5
-
= 1.8V, T
Symbol
V
DDQ
DDQ
V
Symbol
C
C
C
DD
C
SS
IN
T
IN1
IN2
out
IN3
I
P
,V
, V
STG
OS
= 0V, T
D
OUT
6
DDQ
A
= 25
A
Typ
1.8
1.8
1.8
= -25
0
¥
¥
¥
¥
-
-
-
-
, f=1
Min
1.5
1.5
2.0
2.0
o
C~ 85
¦
¦
¦
¦
)
512M: 32M x 16 Mobile DDR SDRAM
V
0.1 x V
o
-55 ~ +150
-0.5 ~ 2.5
-0.5 ~ 2.5
C for Extended)
DDQ
Value
Max
1.95
1.95
0.3
1.0
50
2
5
-
+ 0.3
DDQ
Max
3.0
3.5
4.5
4.5
EMD12164P
Unit
©
©
V
V
V
V
V
V
Preliminary
Unit




Unit
I
W
¨
OH
I
V
V
§
OL
Rev 0.0
Note
= -0.1
= 0.1
1
1
2
2
Note
¨
¨