irf640b Fairchild Semiconductor, irf640b Datasheet - Page 3

• Manufacturer Part Number: irf640b
• Description: 200v N-channel Mosfet
• Manufacturer: Fairchild Semiconductor

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
3500
3000
2500
2000
1500
1000
500
10
1.0
0.8
0.6
0.4
0.2
0.0
10
10
0
10
-1
1
0
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs
Top :
Bottom :
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
V
10
GS
V
V
DS
DS
20
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
10
I
D
, Drain Current [A]
0
0
C
C
C
rss
iss
oss
30
V
V
GS
GS
= 20V
= 10V
40
C
C
C
 Notes :
iss
oss
rss
1. 250 s Pulse Test
2. T
10
10
= C
= C
= C
 Note : T
1
1
C
gs
gd
ds
= 25
+ C
+ C
 Notes :
gd
1. V
2. f = 1 MHz
50
gd
(C
J
G S
ds
= 25
= shorted)
= 0 V
60
10
10
10
10
10
10
12
10
-1
-1
8
6
4
2
0
1
0
1
0
0.2
2
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
25
150
0.4
5
o
C
Variation with Source Current
o
150
C
10
0.6
4
25
V
V
15
and Temperature
Q
GS
SD
0.8
G
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
, Total Gate Charge [nC]
-55
V
20
DS
o
C
V
1.0
= 160V
DS
= 100V
V
25
6
DS
= 40V
1.2
30
1.4
35
 Notes :
 Notes :
1. V
2. 250  s Pulse Test
1. V
2. 250 s Pulse Test
 Note : I
8
DS
GS
1.6
= 40V
= 0V
40
D
= 18 A
1.8
45
Rev. A, November 2001
10
2.0
50