irlm120a Fairchild Semiconductor, irlm120a Datasheet
irlm120a
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irlm120a Summary of contents
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... Storage Temperature Range Maximum Lead Temp. for Soldering T L Purposes, 1/8” from case for 5-seconds Thermal Resistance Symbol Characteristic R Junction-to-Ambient * JA * When mounted on the minimum pad size recommended (PCB Mount). IRLM120A BV DSS R DS(on 2 SOT-223 = 100V DS 1. Gate 2. Drain 3. Source Value ...
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... IRLM120A Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance fs C Input Capacitance iss C Output Capacitance ...
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... S D Fig 6. Gate Charge vs. Gate-Source Voltage = IRLM120A @ ...
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... IRLM120A Fig 7. Breakdown Voltage vs. Temperature Junction Temperature [ J Fig 9. Max. Safe Operating Area ...
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... DUT 10V DUT Resistor out 90 0.5 rated 10 d(on) t ---- DSS IRLM120A Charge d(off off BV 1 DSS 2 -------------------- DSS (t) DS Time ...
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... IRLM120A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT I Driver Driver ) DUT ) DUT ) + Same Type as DUT • dv/dt controlled controlled by Duty Factor D • Gate Pulse Width -------------------------- D = Gate Pulse Period , Body Diode Forward Current ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DenseTrench™ ...