upd78f0124m6gba1-8et Renesas Electronics Corporation., upd78f0124m6gba1-8et Datasheet - Page 441

• Manufacturer Part Number: upd78f0124m6gba1-8et
• Description: 8-bit Single-chip Microcontrollers
• Manufacturer: Renesas Electronics Corporation.

Data Memory STOP Mode Low Supply Voltage Data Retention Characteristics (T
Note When flash memory version
Flash Memory Programming Characteristics:
(T
(1) Write erase characteristics
Notes 1.
Remark The range of the operating clock during flash memory programming is the same as the range during normal
Data retention supply voltage
Release signal set time
V
V
V
Step erase time
Overall erase time
Writeback time
Number of writebacks per 1
writeback command
Number of erases/writebacks
Step write time
Overall write time per word
Number of rewrites per chip
CHAPTER 27 ELECTRICAL SPECIFICATIONS (STANDARD PRODUCTS, (A) GRADE PRODUCTS) (EXPANDED-SPECIFICATION PRODUCTS)
A
PP
DD
PP
= +10 to +60°C, 2.7 V ≤ V
supply voltage
supply current
supply current
2.
3.
4.
5.
6.
7.
operation.
Parameter
Parameter
The recommended setting value of the step erase time is 0.2 s.
The prewrite time before erasure and the erase verify time (writeback time) are not included.
The recommended setting value of the writeback time is 50 ms.
Writeback is executed once by the issuance of the writeback command. Therefore, the number of retries
must be the maximum value minus the number of commands issued.
The recommended setting value of the step write time is 50
The actual write time per word is 100
included.
When a product is first written after shipment, “erase → write” and “write only” are both taken as one
rewrite.
Note 3
Note 5
Note 1
Example: P: Write, E: Erase
Note 2
Note 4
Note 6
Shipped product
Shipped product → E → P → E → P → E → P: 3 rewrites
Note 7
DD
= EV
V
t
V
I
I
T
T
T
C
C
T
T
C
Symbol
Symbol
SREL
DD
PP
er
era
wb
wr
wrw
DDDR
PP2
µ
wb
erwb
erwr
PD78F0124M1, 78F0124M2, 78F0124M1(A), or 78F0124M2(A) is used
DD
≤ 5.5 V, 2.7 V ≤ AV
When POC-OFF is selected by mask
option
During flash memory programming
When V
V
When step erase time = 0.2 s
When writeback time = 50 ms
When step write time = 50
byte)
1 erase + 1 write after erase = 1 rewrite
PP
User’s Manual U16315EJ3V1UD
= V
→ P → E → P → E → P: 3 rewrites
Note
µ
PP2
PP
PD78F0124, 78F0124(A)
= V
µ
s longer. The internal verify time during or after a write is not
PP2
Conditions
Conditions
, f
XP
REF
= 10 MHz, V
≤ V
µ
DD
s (1 word = 1
, V
DD
µ
SS
s.
= 5.5 V
= EV
SS
= AV
0.199
MIN.
MIN.
49.4
1.6
9.7
48
48
0
A
SS
= −40 to +85°C)
= 0 V)
TYP.
TYP.
10.0
0.2
50
50
MAX.
MAX.
0.201
10.3
50.6
100
520
5.5
37
20
60
16
52
20
Times/
s/chip
Times
Times
area
Unit
Unit
mA
mA
ms
µ
µ
µ
V
V
s
s
s
s
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