fqb12n60c Fairchild Semiconductor, fqb12n60c Datasheet

no-image

fqb12n60c

Manufacturer Part Number
fqb12n60c
Description
Fqb12n60c / Fqi12n60c 600v N-channel Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQB12N60C
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2007 Fairchild Semiconductor Corporation
FQB12N60C / FQI12N60C Rev. A
FQB12N60C / FQI12N60C
600V N-Channel MOSFET
Features
• 12A, 600V, R
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 21pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
θJC
θJA
θJA
, T
Symbol
Symbol
STG
DS(on)
G
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
= 0.65Ω @V
S
D
FQB Series
2
-PAK
D
GS
= 10 V
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
= 25°C)
= 25°C)
Parameter
Parameter
G
D
C
C
= 25°C)
= 100°C)
S
1
I
FQI Series
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
2
-PAK
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Typ
FQB12N60C/FQI12N60C
--
--
--
G
-55 to +150
± 30
22.5
3.13
1.78
600
870
225
300
7.4
4.5
12
48
12
Max
0.56
62.5
40
S
September 2007
QFET
D
www.fairchildsemi.com
Units
Units
°C/W
°C/W
°C/W
W/°C
V/ns
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
®

Related parts for fqb12n60c

fqb12n60c Summary of contents

Page 1

... R Thermal Resistance, Junction-to-Ambient θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2007 Fairchild Semiconductor Corporation FQB12N60C / FQI12N60C Rev. A Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. ...

Page 2

... DD G ≤ 12A, di/dt ≤200A/µs, V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature FQB12N60C / FQI12N60C Rev. A Package Reel Size D2-PAK 330mm I2-PAK - T = 25°C unless otherwise noted C Test Conditions = 250 µ ...

Page 3

... C iss 2000 C oss 1500 1000 C rss 500 Drain-Source Voltage [V] DS FQB12N60C / FQI12N60C Rev. A Figure 2. Transfer Characteristics ※ Notes : 1. 250µs Pulse Test ℃ Figure 4. Body Diode Forward Voltage 10V ...

Page 4

... V , Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve FQB12N60C / FQI12N60C Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 ※ Notes : 250 µA 0.5 D 0.0 -100 100 150 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms FQB12N60C / FQI12N60C Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FQB12N60C / FQI12N60C Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Package Dimensions 9.90 ±0.10 1.27 2.54 TYP 10.00 FQB12N60C / FQI12N60C Rev -PAK ±0.20 ±0.10 0.80 2.54 TYP ±0.20 7 4.50 ±0.20 +0.10 1.30 –0.05 ±0.15 0.10 ±0.20 2.40 +0.10 0.50 –0.05 ±0.20 10.00 (8.00) (4.40) (2XR0.45) ±0.10 0.80 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Package Dimensions ±0.10 1.27 2.54 TYP 10.00 FQB12N60C / FQI12N60C Rev. A (Continued -PAK ±0.20 9.90 ±0.10 1.47 ±0.10 0.80 2.54 TYP ±0.20 8 ±0.20 4.50 +0.10 1.30 –0.05 +0.10 0.50 ±0.20 2.40 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FQB12N60C / FQI12N60C Rev. A Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ PowerTrench i-Lo™ IntelliMAX™ Programmable Active Droop™ ...

Related keywords