fqb5n50cf Fairchild Semiconductor, fqb5n50cf Datasheet
fqb5n50cf
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fqb5n50cf Summary of contents
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... R Thermal Resistance, Junction-to-Ambient θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2006 Fairchild Semiconductor Corporation FQB5N50CF Rev. A Description = 10 V These N-Channel enhancement mode power field effect transis- GS tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. ...
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... DD G ≤ 5A, di/dt ≤ 200A/µs, V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature FQB5N50CF Rev. A Package Reel Size D2-PAK 330mm D2-PAK 330mm T = 25°C unless otherwise noted C Test Conditions = 250 µ ...
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... Figure 5. Capacitance Characteristics 1200 1000 800 C iss C oss 600 400 C rss 200 Drain-Source Voltage [V] DS FQB5N50CF Rev. A Figure 2. Transfer Characteristics Notes : µ 1. 250 s Pulse Test ° Figure 4. Body Diode Forward Voltage ...
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... Junction Temperature [ J Figure 9. Maximum Safe Operating Area 2 10 Operation in This Area is Limited by R DS(on Drain-SourceVoltage[V] DS Figure 11. Transient Thermal Response Curve FQB5N50CF Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 Notes : 0.5 µ 250 A D 0.0 100 150 200 ° ...
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... Unclamped Inductive Switching Test Circuit & Waveforms FQB5N50CF Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...
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... FQB5N50CF Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...
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... Mechanical Dimensions FQB5N50CF Rev. A D2-PAK 7 Dimensions in Millimeters www.fairchildsemi.com ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FQB5N50CF Rev. A ISOPLANAR™ PowerEdge™ LittleFET™ PowerSaver™ MICROCOUPLER™ PowerTrench ® MicroFET™ QFET MicroPak™ ...