fqb6n40cf Fairchild Semiconductor, fqb6n40cf Datasheet

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... R Thermal Resistance, Junction-to-Ambient θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2005 Fairchild Semiconductor Corporation FQB6N40CF Rev. A Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. ...

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... DD G ≤ 6A, di/dt ≤ 200A/µs, V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature FQB6N40CF Rev. A Package Reel Size 2 D -PAK 330mm T = 25°C unless otherwise noted C Test Conditions = 250 µA ...

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... Figure 5. Capacitance Characteristics 1200 1000 800 C iss 600 C oss 400 C rss 200 Drain-Source Voltage [V] DS FQB6N40CF Rev. A Figure 2. Transfer Characteristics ∝ Notes : 1. 250 レ s Pulse Test 25∩ Figure 4. Body Diode Forward Voltage 10V ...

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... V , Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve FQB6N40CF Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 ∝ Notes : 250 レ A 0.5 D 0.0 100 150 200 ...

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... Unclamped Inductive Switching Test Circuit & Waveforms FQB6N40CF Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

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... Peak Diode Recovery dv/dt Test Circuit & Waveforms FQB6N40CF Rev www.fairchildsemi.com ...

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... Mechanical Dimensions 9.90 1.27 ±0.10 2.54 TYP 10.00 FQB6N40CF Rev -PAK ±0.20 0.80 ±0.10 2.54 TYP ±0.20 7 4.50 ±0.20 +0.10 1.30 –0.05 0.10 ±0.15 2.40 ±0.20 +0.10 0.50 –0.05 10.00 ±0.20 (8.00) (4.40) (2XR0.45) 0.80 ±0.10 Dimensions in Millimeters www.fairchildsemi.com ...

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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FQB6N40CF Rev. A ISOPLANAR™ PowerSaver™ LittleFET™ PowerTrench MICROCOUPLER™ QFET MicroFET™ QS™ MicroPak™ ...