fqb24n08 Fairchild Semiconductor, fqb24n08 Datasheet - Page 3

• Manufacturer Part Number: fqb24n08
• Description: Fqb24n08 / Fqi24n08 80v N-channel Mosfet
• Manufacturer: Fairchild Semiconductor

©2000 Fairchild Semiconductor International
Typical Characteristics
1600
1400
1200
1000
0.20
0.16
0.12
0.08
0.04
0.00
800
600
400
200
10
10
10
-1
0
1
0
10
10
0
Figure 5. Capacitance Characteristics
-1
Figure 3. On-Resistance Variation vs.
-1
Top :
Bottom : 4.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
V
GS
20
C
C
C
V
V
oss
iss
rss
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
10
, Drain Current [A]
0
10
40
V
0
GS
V
= 20V
GS
= 10V
※ Notes :
1. 250μ s Pulse Test
2. T
60
C
= 25℃
C
C
C
iss
oss
rss
= C
= C
= C
10
gs
gd
※ Note : T
ds
1
+ C
+ C
80
10
gd
※ Notes :
gd
1
1. V
2. f = 1 MHz
(C
ds
J
GS
= shorted)
= 25℃
= 0 V
100
10
10
10
10
10
10
12
10
-1
8
6
4
2
0
-1
1
0
1
0
0.2
0
2
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
2
0.4
25℃
175℃
175℃
Variation vs. Source Current
4
0.6
4
V
V
Q
25℃
SD
and Temperature
6
GS
G
, Source-Drain voltage [V]
, Gate-Source Voltage [V]
, Total Gate Charge [nC]
0.8
-55℃
8
V
1.0
10
6
DS
V
= 64V
DS
= 40V
12
1.2
14
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
1.4
※ Note : I
8
DS
GS
16
= 30V
= 0V
D
1.6
= 24A
18
Rev. A, August 2000
1.8
10
20