fqd12p10 Fairchild Semiconductor, fqd12p10 Datasheet - Page 4

• Manufacturer Part Number: fqd12p10
• Description: Fqd12p10 / Fqu12p10 100v P-channel Mosfet
• Manufacturer: Fairchild Semiconductor

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
10
10
1.2
1.1
1.0
0.9
0.8
-1
Figure 9. Maximum Safe Operating Area
-100
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
-V
T
vs. Temperature
J
DS
, Junction Temperature [
Operation in This Area
is Limited by R
0
, Drain-Source Voltage [V]
" Notes :
1 0
1 0
1. T
2. T
3. Single Pulse
- 1
C
J
0
1 0
= 150
= 25
10
- 5
1
o
D = 0 . 5
0 . 0 2
0 . 0 1
C
o
0 . 0 5
DS(on)
C
50
DC
0 . 2
0 . 1
10 ms
Figure 11. Transient Thermal Response Curve
100
1 ms
(Continued)
1 0
o
C]
- 4
s in g le p u ls e
" Notes :
100 s
1. V
2. I
t
D
GS
1
= -250 # A
150
, S q u a r e W a v e P u ls e D u r a tio n [s e c ]
= 0 V
10
2
1 0
- 3
200
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
-100
8
6
4
2
0
25
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
" N o te s :
1 0
1 . Z
2 . D u ty F a c to r, D = t
3 . T
P
- 1
-50
DM
$ J C
J M
50
- T
(t) = 2 .5 ! /W M a x .
vs. Case Temperature
C
T
= P
vs. Temperature
J
T
t
, Junction Temperature [
1
C
D M
0
t
, Case Temperature [ ! ]
2
1 0
* Z
75
0
1
$ J C
/t
2
(t)
50
100
1 0
100
1
o
C]
" Notes :
125
1. V
2. I
150
D
GS
= -4.7 A
= -10 V
Rev. B, August 2002
200
150