KSE170 Fairchild Semiconductor, KSE170 Datasheet
KSE170
Manufacturer Part Number
KSE170
Description
Low Power Audio Amplifier Low Current/ High Speed Switching Applications
Manufacturer
Fairchild Semiconductor
Datasheet
1.KSE170.pdf
(5 pages)
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©2001 Fairchild Semiconductor Corporation
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
Low Power Audio Amplifier
Low Current, High Speed Switching Applications
V
V
V
I
I
I
P
T
T
BV
C
CP
B
I
I
h
V
V
V
f
C
J
STG
CBO
EBO
T
CBO
CEO
EBO
C
FE
Symbol
CE
BE
BE
ob
Symbol
CEO
(sat)
(on)
(sat)
Collector-Emitter Breaksown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
a
C
T
=25 C)
=25 C)
C
KSE170/171/172
=25 C unless otherwise noted
: KSE170
: KSE171
: KSE172
: KSE171
: KSE172
: KSE170
: KSE171
: KSE172
: KSE170
Parameter
T
C
=25 C unless otherwise noted
I
V
V
V
V
V
V
V
V
V
V
I
I
I
I
I
V
V
V
C
C
C
C
C
C
CB
CB
CB
CB
CB
CB
BE
CE
CE
CE
CE
CE
CB
= 10mA, I
= - 500mA, I
= - 1.5A, I
= - 3A, I
= - 1.5A, I
= - 3A, I
= - 60V, I
= - 80V, I
= - 100V, I
= - 60V, I
= - 80V, I
= - 100V, I
= - 7V, I
= - 1V, I
= - 1V, I
= - 1V, I
= - 1V, I
= - 10V, I
= - 10V, I
: KSE171
: KSE172
: KSE171
: KSE172
: KSE170
: KSE170
B
B
Test Condition
B
C
= - 600mA
= - 600mA
C
C
C
B
B
C
B
E
E
E
C
E
= 0
= 0
= - 150mA
= - 150mA
= - 100mA
= - 500mA
= - 1.5A
= - 500mA
E
E
B
= 0
= 0
= 0, T
= 0, T
= - 100mA
= 0, f = 0.1MHz
= 0
= 0, T
= - 50mA
C
C
C
= 150 C
= 150 C
= 150 C
1
1. Emitter
- 65 ~ 150
Value
- 100
12.5
150
- 60
- 80
- 40
- 60
- 80
1.5
2.Collector
- 7
- 3
- 6
- 1
Min.
-40
-60
-80
50
30
12
50
TO-126
Max.
-0.1
-0.1
-0.1
-0.1
-0.1
-0.1
-0.1
250
-0.3
-0.9
-1.7
-1.5
-2.0
-1.2
50
3.Base
Rev. A1, January 2001
Units
W
W
Units
V
V
V
V
V
V
V
A
A
A
C
C
MHz
mA
mA
mA
pF
V
V
V
V
V
V
V
V
V
A
A
A
A
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KSE170 Summary of contents
Page 1
... C unless otherwise noted C Parameter : KSE170 : KSE171 : KSE172 : KSE170 : KSE171 : KSE172 = = =25 C unless otherwise noted C Test Condition : KSE170 I = 10mA KSE171 : KSE172 : KSE170 60V KSE171 80V KSE172 100V KSE170 60V KSE171 ...
Page 2
... Figure 6. Safe Operating Area (sat = - = -0.1 -1 -10 -100 I [A], COLLECTOR CURRENT C Collector-Emitter Saturation Voltage -0.1 -1 -10 I [A], COLLECTOR CURRENT C Figure 4. Turn On Time KSE170 KSE171 KSE172 V MAX. CE -10 -100 V [V], COLLECTOR-EMITTER VOLTAGE CE Rev. A1, January 2001 ...
Page 3
... Typical Characteristics 100 o Tc[ C], CASE TEMPERATURE Figure 7. DC current Gain ©2001 Fairchild Semiconductor Corporation (Continued) 125 150 175 Rev. A1, January 2001 ...
Page 4
... Package Demensions ø3.20 0.10 0.75 0.10 1.60 0.10 0.75 0.10 2.28TYP [2.28 0.20] ©2001 Fairchild Semiconductor Corporation TO-126 8.00 0.30 #1 2.28TYP [2.28 0.20] 3.25 0.20 (1.00) (0.50) 1.75 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters Rev. A1, January 2001 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...