SS9013 Fairchild Semiconductor, SS9013 Datasheet
SS9013
Manufacturer Part Number
SS9013
Description
NPN Epitaxial Silicon Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
1.SS9013.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SS9013GTA
Manufacturer:
SILAN
Quantity:
4 500
©2002 Fairchild Semiconductor Corporation
1W Output Amplifier of Potable Radios in
Class B Push-pull Operation.
• High total power dissipation. (P
• High Collector Current. (I
• Complementary to SS9012
• Excellent h
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
P
T
T
BV
BV
BV
I
I
h
h
V
V
V
C
CBO
EBO
FE
Symbol
FE1
FE2
J
STG
CBO
CEO
EBO
C
CE
BE
BE
CBO
CEO
EBO
Symbol
(sat)
(on)
(sat)
Classification
Classification
h
FE
FE1
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
linearity.
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
C
Parameter
=500mA)
T
=625mW)
64 ~ 91
D
T
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
SS9013
78 ~ 112
I
I
I
V
V
V
V
I
I
V
C
C
E
C
C
E
CB
EB
CE
CE
CE
=100 A, I
=100 A, I
=1mA, I
=500mA, I
=500mA, I
=3V, I
=25V, I
=1V, I
=1V, I
=1V, I
Test Condition
C
C
C
C
B
E
=0
=0
=50mA
=500mA
=10mA
E
C
B
B
=0
=0
=0
=50mA
=50mA
96 ~ 135
F
1. Emitter 2. Base 3. Collector
1
Min.
0.6
40
20
64
40
5
112 ~ 166
-55 ~ 150
Ratings
500
625
150
G
40
20
5
Typ.
0.16
0.91
0.67
120
120
TO-92
Max.
100
100
202
0.6
1.2
0.7
144 ~ 202
Rev. A4, November 2002
Units
H
mW
mA
V
V
V
C
C
Units
nA
nA
V
V
V
V
V
V
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SS9013 Summary of contents
Page 1
... V (sat) Collector-Emitter Saturation Voltage CE V (sat) Base-Emitter Saturation Voltage BE V (on) Base-Emitter On Voltage BE h Classification FE Classification FE1 ©2002 Fairchild Semiconductor Corporation SS9013 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I =100 =1mA =100 A, I ...
Page 2
... V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 1. Static Characteristic 10000 1000 V (sat) BE 100 100 I [mA], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage ©2002 Fairchild Semiconductor Corporation 1000 I = 140 120 100 A B 100 ...
Page 3
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A4, November 2002 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...