MT9LSDT1672AG-10E Micron, MT9LSDT1672AG-10E Datasheet - Page 18

• Manufacturer Part Number: MT9LSDT1672AG-10E
• Description: SYNCHRONOUS DRAM MODULE
• Manufacturer: Micron

EEPROM DEVICE SELECT CODE
(The most significant bit (b7) is sent first)
EEPROM OPERATING MODES
(X = V
SERIAL PRESENCE-DETECT EEPROM TIMING PARAMETERS
16, 32 Meg x 72 SDRAM DIMMs
SD9_18C16_32X72AG_C.p65 – Rev. C; Pub. 11/01
Memory Area Select Code (two arrays)
Protection Register Select Code
Current Address Read
Random Address Read
Sequential Read
Byte Write
Page Write
SYMBOL
t
t
t
t
t
t
AA
BUF
DH
F
HD:DAT
HD:STA
SDA OUT
SDA IN
IH
SCL
or V
MODE
IL
)
t SU:STA
MIN
300
0.3
4.7
RW Bit
0
4
t F
0
1
1
0
0
1
SPD EEPROM TIMING DIAGRAM
t HD:STA
MAX
t LOW
300
3.5
t AA
b7
1
0
UNITS
WC
V
V
µs
µs
ns
ns
µs
µs
X
X
X
X
IL
IL
Device Type Identifier
t HIGH
1
t HD:DAT
b6
0
1
18
BYTES
≤ 16
≥ 1
SYMBOL
t
t
t
t
t
t
t DH
1
1
1
HIGH
LOW
R
SU:DAT
SU:STA
SU:STO
b5
1
1
t R
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t SU:DAT
Start, Device Select, RW = 0, Address
reSTART, Device Select, RW = 1
Similar to Current or Random Address Read
START, Device Select, RW = 0
START, Device Select, RW = 0
Start, Device Select, RW = 1
128MB/256MB (x72, ECC)
b4
0
0
168-PIN SDRAM DIMMs
b3
E2
E2
Initial Sequence
Chip Enable
b2
E1
E1
MIN
250
4.7
4.7
4.7
t SU:STO
4
t BUF
b1
E0
E0
©2001, Micron Technology, Inc.
UNDEFINED
MAX
1
RW
RW
RW
b0
UNITS
µs
µs
µs
ns
µs
µs