MT28F320J3 Micron, MT28F320J3 Datasheet - Page 13
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MT28F320J3
Manufacturer Part Number
MT28F320J3
Description
Q-FLASHTM MEMORY
Manufacturer
Micron
Datasheet
1.MT28F320J3.pdf
(52 pages)
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READ ARRAY COMMAND
device power-up and after exiting reset/power-down
mode. The read configuration register defaults to asyn-
chronous read page mode. Until another command is
written, the READ ARRAY command also causes the
device to enter read array mode. When the ISM has
started a block erase, program, or lock bit configura-
tion, the device does not recognize the READ ARRAY
command until the ISM completes its operation, un-
less the ISM is suspended via an ERASE or PROGRAM
SUSPEND command. The READ ARRAY command
functions independently of the V
READ QUERY MODE COMMAND
structure or “data base” returned by the CFI QUERY
command. System software should retain this struc-
ture to gain critical information such as block size,
density, x8/x16, and electrical specifications. When
this information has been obtained, the software
knows which command sets to use to enable Flash
writes or block erases, and otherwise control the Flash
component.
NOTE: 1. The system must drive the lowest-order addresses to access all the device’s array data when the device is configured in
128Mb, 64Mb, 32Mb Q-Flash Memory
MT28F640J3_7.p65 – Rev. 6, Pub. 8/02
DEVICE
TYPE/
MODE
x16 device
x16 mode
x16 device
x8 mode
The device defaults to read array mode upon initial
This section is related to the definition of the data
Summary of Query Structure Output as a Function of Device and Mode
x8 mode. Therefore, word addressing where these lower addresses are not toggled by the system is “Not Applicable”
for x8-configured devices.
QUERY START LOCATION IN
MAXIMUM DEVICE BUS
WIDTH ADDRESSES
N/A
10h
1
PEN
voltage.
OFFSET
HEX
MAXIMUM DEVICE BUS
10
11
12
Table 5
WIDTH ADDRESSING
QUERY DATA WITH
13
QUERY STRUCTURE OUTPUT
obtain information about controlling the Flash compo-
nent. The device’s CFI-compliant interface allows the
host system to access query data. Query data are al-
ways located on the lowest-order data outputs (DQ0–
DQ7) only. The numerical offset value is the address
relative to the maximum bus width supported by the
device. On this family of devices, the query table de-
vice starting address is a 10h, which is a word address
for x16 devices.
query structure, “Q” and “R” in ASCII, appear on the
low byte at word addresses 10h and 11h. This CFI-
compliant device outputs 00h data on upper bytes,
thus making the device output ASCII “Q” on the LOW
byte (DQ7–DQ0) and 00h on the HIGH byte (DQ15–
DQ8). At query addresses containing two or more bytes
of information, the least significant data byte is located
at the lower address, and the most significant data
byte is located at the higher address. This is summa-
rized in Table 5. A more detailed example is provided in
Table 6.
CODE
0059
HEX
0051
0052
N/A
The query “data base” enables system software to
For a x16 organization, the first two bytes of the
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
VALUE
ASCII
Q
R
Y
128Mb, 64Mb, 32Mb
OFFSET
Q-FLASH MEMORY
QUERY DATA WITH BYTE
HEX
20
21
22
20
21
22
ADDRESSING
CODE
HEX
51
00
52
51
51
52
©2002, Micron Technology, Inc.
VALUE
ASCII
Null
Q
Q
Q
R
R