MT18VDDT6472PHG-265 Micron, MT18VDDT6472PHG-265 Datasheet - Page 12

• Manufacturer Part Number: MT18VDDT6472PHG-265
• Description: 512MB DDR SDRAM SODIMM
• Manufacturer: Micron

Absolute Maximum Ratings
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
Table 10: DC Electrical Characteristics and Operating Conditions
Notes: 1–5, 14; notes appear on pages 19–22; 0°C
Table 11: AC Input Operating Conditions
Notes: 1–5, 12, 48; notes appear on pages 19–22; 0°C
pdf: 09005aef808ffe58, source: 09005aef808ffdc7
DD9C16_32_64_128x72PHG.fm - Rev. B 9/04 EN
PARAMETER/CONDITION
Supply Voltage
I/O Supply Voltage
I/O Reference Voltage
I/O Termination Voltage (system)
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
INPUT LEAKAGE CURRENT
Any input 0V V
1.35V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT
(DQs are disabled; 0V
OUTPUT LEVELS:
High Current (V
Low Current (V
PARAMETER/CONDITION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
I/O Reference Voltage
Stresses greater than those listed may cause perma-
V
V
V
I/O Pins Voltage
REF
DD
DD
Relative to Vss . . . . . . . . . . . . . . . . . . . . -1V to +3.6V
Relative to V
Q Supply Voltage Relative to V
Supply Voltage Relative to V
and Inputs Voltage
OUT
OUT
IN
SS
= 0.373V, maximum V
= V
V
. . . . . . . . . . . . . -0.5V to VddQ +0.5V
DD
DDQ
V
, V
OUT
REF
-0.373V, minimum V
pin 0V V
V
DDQ
)
SS
SS
128MB, 256MB, 512MB, 1GB (x72, ECC, PLL, SR)
IN
. . . . -1V to +3.6V
REF
. . . -1V to +3.6V
, maximum V
Command/Address,
RAS#, CAS#, WE#,
CKE, S#
CK, CK#
DM
DQ, DQS
REF
, minimum V
T
A
T
+70°C
A
SYMBOL
V
TT
V
V
REF
IH
IL
)
+70°C; V
(A
(
12
AC
(
AC
C
TT
)
)
)
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
)
SYMBOL
Operating Temperature,
Storage Temperature (plastic) . . . . . . -55°C to +150°C
Short Circuit Output Current. . . . . . . . . . . . . . . . 50mA
V
V
DD
V
V
0.49 x V
200-PIN DDR SDRAM SODIMM
V
IH
V
IL
V
I
I
I
DDQ
REF
T
T
OH
OZ
REF
OL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
(D
(
I
I
I
TT
= V
I
I
I
DC
A
A
MIN
C
(ambient - commercial) . . . . . . . . . 0°C to +70°C
(ambient - industrial) . . . . . . . . . -40°C to +85°C
+ 0.310
)
)
–
DD
DDQ
Q = +2.5V ±0.2V
0.49 x V
V
V
REF
REF
-16.8
MIN
16.8
-0.3
2.3
2.3
-18
-5
-2
-5
+ 0.15
- 0.04
V
0.51 x
DDQ
REF
MAX
- 0.310
–
V
0.51 x V
V
DDQ
V
V
REF
REF
DD
MAX
©2004 Micron Technology, Inc. All rights reserved.
2.7
2.7
18
+ 0.04
5
2
5
–
–
- 0.15
+ 0.3
DDQ
UNITS
V
V
V
UNITS
mA
mA
µA
µA
µA
µA
V
V
V
V
V
V
ADVANCE
NOTES
25, 35
25, 35
32, 36, 39
NOTES
32, 36
33, 34
6
6, 39
7, 39
25
25
46
46