FQD2N60 Fairchild Semiconductor, FQD2N60 Datasheet

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FQD2N60

Manufacturer Part Number
FQD2N60
Description
600V N-Channel MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

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©2000 Fairchild Semiconductor International
FQD2N60 / FQU2N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
Absolute Maximum Ratings 
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
Symbol
Symbol
, T
JC
JA
JA
STG
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
S
FQD Series
D-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
= 25°C) *
Parameter
Parameter
= 25°C)
G
 T
D
C
C
C
= 25°C unless otherwise noted
S
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 2.0A, 600V, R
• Low gate charge ( typical 9.0 nC)
• Low Crss ( typical 5.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQU Series
I-PAK
FQD2N60 / FQU2N60
DS(on)
Typ
--
--
--
-55 to +150
= 4.7
1.26
0.36
600
140
300
2.0
8.0
2.0
4.5
4.5
2.5
45
30
G
@V
!
!
Max
2.78
110
GS
50
QFET
QFET
QFET
QFET
= 10 V
! "
! "
!
!
!
!
S
D
"
"
"
"
"
"
April 2000
Units
W/°C
Units
°CW
°CW
°CW
V/ns
mJ
mJ
Rev. A, April 2000
°C
°C
W
W
V
A
A
A
V
A
TM

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FQD2N60 Summary of contents

Page 1

... A = 25°C) C Parameter April 2000 QFET QFET QFET QFET = 4 DS(on " " ! " ! " G " " " " FQD2N60 / FQU2N60 Units 600 V 2.0 A 1.26 A 8.0 A 30 V 140 mJ 2.0 A 4.5 mJ 4.5 V/ns 2 0.36 W/°C -55 to +150 °C 300 °C Typ Max Units -- 2 ...

Page 2

... V = 50V 2.4A, di/dt  200A DSS, 4. Pulse Test : Pulse width  300 s, Duty cycle  2% 5. Essentially independent of operating temperature ©2000 Fairchild Semiconductor International T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° ...

Page 3

... Drain Current and Gate Voltage 500 400 C iss 300 C oss 200 C rss 100 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2000 Fairchild Semiconductor International Notes : 1. 250  s Pulse Test = 10V GS = 20V Note : ...

Page 4

... Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2000 Fairchild Semiconductor International (Continued) 3.0 2.5 2.0 1.5 1.0  Notes : 250  0.5 D 0.0 100 150 200 -100 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2000 Fairchild Semiconductor International Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT R ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2000 Fairchild Semiconductor International + + DUT DUT Driver Driver Same Type Same Type ...

Page 7

... Package Dimensions 6.60 5.34 (0.50) (4.34) MAX0.96 2.30TYP [2.30 0.20] ©2000 Fairchild Semiconductor International DPAK 0.20 0.30 (0.50) 0.76 0.10 2.30TYP [2.30 0.20] 2.30 0.10 0.50 0.10 0.50 0.10 1.02 0.20 2.30 0.20 6.60 0.20 (5.34) (5.04) (1.50) (2XR0.25) 0.76 0.10 Rev. A, April 2000 ...

Page 8

... Package Dimensions (Continued) 6.60 5.34 (0.50) (4.34) MAX0.96 0.76 0.10 2.30TYP [2.30 0.20] ©2000 Fairchild Semiconductor International IPAK 0.20 0.20 (0.50) 2.30TYP [2.30 0.20] 2.30 0.20 0.50 0.10 0.50 0.10 Rev. A, April 2000 ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® ...

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