FDP047AN08 Fairchild Semiconductor, FDP047AN08 Datasheet - Page 7

• Manufacturer Part Number: FDP047AN08
• Description: N-Channel UltraFET Trench MOSFET 75V/ 80A/ 4.7m
• Manufacturer: Fairchild Semiconductor

©2002 Fairchild Semiconductor Corporation
PSPICE Electrical Model
.SUBCKT FDP047AN08A0 2 1 3 ;
CA 12 8 1.5e-9
CB 15 14 1.5e-9
CIN 6 8 6.4e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 82.3
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 4.81e-9
LSOURCE 3 7 4.63e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 9e-4
RGATE 9 20 1.36
RLDRAIN 2 5 10
RLGATE 1 9 48.1
RLSOURCE 3 7 46.3
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 2.3e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*250),10))}
.MODEL DBODYMOD D (IS = 2.4e-11 N = 1.04 RS = 1.76e-3 TRS1 = 2.7e-3 TRS2 = 2e-7 XTI=3.9 CJO = 4.35e-9 TT = 1e-8
M = 5.4e-1)
.MODEL DBREAKMOD D (RS = 1.5e-1 TRS1 = 1e-3 TRS2 = -8.9e-6)
.MODEL DPLCAPMOD D (CJO = 1.35e-9 IS = 1e-30 N = 10 M = 0.53)
.MODEL MMEDMOD NMOS (VTO = 3.7 KP = 9 IS =1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1.36)
.MODEL MSTROMOD NMOS (VTO = 4.4 KP = 250 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 3.05 KP = 0.03 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1.36e1 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 1.05e-3 TC2 = -9e-7)
.MODEL RDRAINMOD RES (TC1 = 1.9e-2 TC2 = 4e-5)
.MODEL RSLCMOD RES (TC1 = 1.3e-3 TC2 = 1e-5)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -6e-3 TC2 = -1.9e-5)
.MODEL RVTEMPMOD RES (TC1 = -2.4e-3 TC2 = 1e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.0 VOFF= -1.5)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.5 VOFF= -4.0)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.0 VOFF= 0.5)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= -1.0)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
GATE
1
rev March 2002
RLGATE
LGATE
9
RGATE
CA
12
20
EVTEMP
+
S1A
S1B
ESG
18
22
EGS
13
8
+
-
-
13
6
8
10
+
+
-
-
14
13
6
8
6
RSLC2
S2A
S2B
DPLCAP
EVTHRES
+
EDS
19
8
15
CB
CIN
-
+
-
5
8
51
5
5
+
-
MSTRO
14
51
21
RDRAIN
RSLC1
50
ESLC
16
8
MMED
8
EBREAK
IT
DBREAK
RSOURCE
MWEAK
17
RVTHRES
RBREAK
11
+
-
17
18
7
+
18
-
22
RVTEMP
19
RLSOURCE
DBODY
LSOURCE
VBAT
RLDRAIN
LDRAIN
FDP047AN08A0 Rev. A
SOURCE
DRAIN
2
3