FQB55N06 Fairchild Semiconductor, FQB55N06 Datasheet

no-image

FQB55N06

Manufacturer Part Number
FQB55N06
Description
60V N-Channel MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQB55N06
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2001 Fairchild Semiconductor Corporation
FQB55N06 / FQI55N06
60V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
FQB Series
D
2
-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
Parameter
Parameter
= 25°C) *
= 25°C)
G
D
T
S
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 55A, 60V, R
• Low gate charge ( typical 35 nC)
• Low Crss ( typical 85 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175 C maximum junction temperature rating
FQI Series
I
2
-PAK
DS(on)
FQB55N06 / FQI55N06
Typ
--
--
--
= 0.020
-55 to +175
38.9
13.3
3.75
0.89
220
545
133
300
7.0
60
55
55
25
G
@V
!
!
Max
1.13
62.5
40
GS
QFET
! "
! "
= 10 V
!
!
!
!
S
D
"
"
"
"
"
"
May 2001
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
Rev. A1. May 2001
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
TM

Related parts for FQB55N06

FQB55N06 Summary of contents

Page 1

... A = 25°C) C Parameter May 2001 QFET = 0.020 @ DS(on " " ! " ! " " " " " FQB55N06 / FQI55N06 Units 38.9 A 220 545 13.3 mJ 7.0 V/ns 3.75 W 133 W 0.89 W/°C -55 to +175 °C 300 °C Typ Max ...

Page 2

... ≤ 55A, di/dt ≤ 300A s, V ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25°C ...

Page 3

... Drain Current and Gate Voltage 4000 3000 C oss C 2000 iss 1000 C rss Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation Figure 2. Transfer Characteristics 10V 1 10 ※ Note : T = 25℃ J 150 200 ...

Page 4

... Notes : 175 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2001 Fairchild Semiconductor Corporation (Continued) 2.5 2.0 1.5 1.0 ※ Notes : 0.5 = 250 μ 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2001 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2001 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type ...

Page 7

... Package Dimensions 9.90 0.20 1.27 0.10 2.54 TYP 10.00 ©2001 Fairchild Semiconductor Corporation 2 D PAK 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 0.10 0.15 2.40 0.20 +0.10 0.50 –0.05 10.00 0.20 (8.00) (4.40) (2XR0.45) 0.80 0.10 Rev. A1. May 2001 ...

Page 8

... Package Dimensions (Continued) 9.90 1.27 0.10 2.54 TYP 10.00 ©2001 Fairchild Semiconductor Corporation 2 I PAK 0.20 1.47 0.10 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 –0.05 0.20 Rev. A1. May 2001 ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

Related keywords