FQB25N33 Fairchild Semiconductor, FQB25N33 Datasheet - Page 3

• Manufacturer Part Number: FQB25N33
• Description: N-Channel MOSFET
• Manufacturer: Fairchild Semiconductor

FQB25N33 Rev. A
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation vs.
Figure 5. Capacitance Characteristics
100
0.1
10
4000
3000
2000
1000
1
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0
0.1
Top :
Bottom : 5.0 V
0
Drain Current and Gate Voltage
10.0 V
15.0 V
8.0 V
7.5 V
7.0 V
6.5 V
6.0 V
5.5 V
V
GS
10
V
V
DS
DS
, Drain-Source Voltage [V]
1
, Drain-Source Voltage [V]
1
20
I
D
V
, Drain Current [A]
GS
= 10V
C
C
rss
C
iss
30
oss
10
C
C
C
40
iss
oss
rss
= C
= C
= C
V
* Notes :
GS
gs
gd
1. 250
2. T
ds
+ C
= 15V
+ C
C
* Note : T
gd
= 25
gd
µ
* Note ;
(C
s Pulse Test
50
10
1. V
2. f = 1 MHz
ds
o
C
= shorted)
GS
J
= 25
= 0 V
o
C
100
60
3
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
100
0.1
1E-3
1E-4
10
0.01
100
12
10
0.1
1
10
8
6
4
2
0
2
1
0.0
0
and Temperatue
10
Variation vs. Source Current
0.2
25
150
o
4
C
20
V
o
V
C
GS
Q
150
SD
V
V
0.4
V
, Gate-Source Voltage [V]
DS
DS
G
, Source-Drain voltage [V]
DS
, Total Gate Charge [nC]
o
= 165V
= 264V
C
= 66V
30
0.6
25
6
o
C
40
-55
o
C
0.8
50
* Notes :
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* Notes :
1. V
2. 250
8
1. V
2. 250
* Note : I
GS
DS
µ
= 0V
1.0
s Pulse Test
µ
= 50V
60
s Pulse Test
D
= 25A
1.2
70
10