FQB11N40C Fairchild Semiconductor, FQB11N40C Datasheet - Page 4

• Manufacturer Part Number: FQB11N40C
• Description: 400V N-Channel MOSFET
• Manufacturer: Fairchild Semiconductor

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©2004 Fairchild Semiconductor Corporation
Typical Characteristics
10
1.2
1.1
1.0
0.9
0.8
10
10
10
Figure 9. Maximum Safe Operating Area
-1
-100
Figure 7. Breakdown Voltage Variation
2
1
0
10
0
-50
T
V
Operation in This Area
is Limited by R
vs Temperature
J
DS
, Junction Temperature [
10
, Drain-Source Voltage [V]
0
1 0
1 0
1 0
1
- 1
- 2
1 0
0
DC
- 5
DS(on)
D = 0 . 5
0 . 1
0 . 0 5
0 . 0 2
0 . 2
0 . 0 1
100 ms
50
※ Notes :
1. T
2. T
3. Single Pulse
10 ms
Figure 11. Transient Thermal Response Curve
C
J
= 150
= 25
1 ms
(Continued)
100
10
1 0
o
C
o
s in g le p u ls e
C
2
o
- 4
C]
100 s
※ Notes :
t
1. V
2. I
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
GS
= 250 μ A
150
= 0 V
10 s
1 0
- 3
200
10
3
1 0
- 2
12
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
8
6
4
2
0
25
-100
※ N o te s :
1 0
Figure 10. Maximum Drain Current
Figure 8. On-Resistance Variation
1 . Z
2 . D u t y F a c t o r , D = t
3 . T
- 1
θ J C
J M
P
DM
-50
( t ) = 0 . 9 3 ℃ / W M a x .
- T
50
C
vs Case Temperature
= P
T
T
vs Temperature
D M
1 0
J
C
t
, Junction Temperature [
, Case Temperature [ ℃ ]
1
0
t
* Z
0
2
75
1
/ t
θ J C
2
( t )
50
1 0
100
1
100
o
C]
125
※ Notes :
1. V
2. I
150
D
GS
= 5.25 A
= 10 V
Rev. A, January 2004
150
200