T35L6432A TM Technology Inc., T35L6432A Datasheet - Page 9

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T35L6432A

Manufacturer Part Number
T35L6432A
Description
64k X 32 Sram 3.3v Supply, Fully Registered Inputs And Outputs, Burst Counter
Manufacturer
TM Technology Inc.
Datasheet

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tm
AC TEST CONDITIONS
Notes:
1. All voltages referenced to VSS (GND).
2. Overshoot:
3. Icc is given with no output current. Icc increases
4. This parameter is sampled.
5. Test conditions as specified with the output
6. Output loading is specified with CL = 5 pF as in
7. At any given temperature and voltage condition,
OUTPUT LOADS
Taiwan Memory Technology, Inc. reserves the right
to change products or specifications without notice.
Input pulse levels
Input rise and fall times
Input timing reference levels
Output reference levels
Output load
Undershoot: V IL
with greater output loading and faster cycle
times.
loading as shown in Fig. 1 unless otherwise
noted.
Fig. 2.
t KQHZ is less than t KQLZ and t OEHZ is less
than t OELZ.
CH
TE
V IH
-1.0 V for t
+3.6 V for t
DQ
Fig.1 OUTPUT LOAD EQUIVALENT
Fig.2 OUTPUT LOAD EQUIVALENT
See Figures 1 and 2
t KC/2.
t KC/2.
DQ
0V to 3.0V
Z
0
= 50
1.5ns
1.5V
1.5V
351
P. 9
8. A READ cycle is defined by byte write enables
9.
10.This is a synchronous device. All synchronous
11.AC I/O curves are available upon request.
12."Device Deselected means the device is in
13.Typical values are measured at 3.3V, 25 C and
14.MODE pin has an internal pull-up and exhibits
Vt = 1.5V
all HIGH or
enables being active for the required setup and
hold times. A WRITE cycle is defined by at one
byte or all byte WRITE per READ/WRITE
TRUTH TABLE.
sampled LOW.
inputs must meet specified setup and hold time,
except for "don't care" as defined in the truth
table.
POWER-DOWN mode as defined in the truth
table. "Device Selected" means the device is
active.
20ns cycle time.
an input leakage current of
OE
is a "don't care" when a byte write enable is
50
3.3V
5 pF
317
ADSP
Publication Date: DEC. 1998
30 pF
LOW along with chip
10 A.
T35L6432A
Revision:A

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